Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|-style="background:white; color:black" | |-style="background:white; color:black" | ||
|<!-- '''Recipe name''' --> ''' | |<!-- '''Recipe name''' --> '''CHF3_t1''' | ||
|<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> Coil= | |<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= 15W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!-- | |<!--Process time--> 2:30 | ||
|<!--'''Date'''--> | |<!--'''Date'''--> 29/02/2024 | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Profile angles'''--> | |<!--'''Profile angles'''--> | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> nm/min <br> +/- % | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> nm/min <br> +/- % | ||
|<!--'''Selectivity (SiO2:resist)'''--> | |<!--'''Selectivity (SiO2:resist)'''--> | ||
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Revision as of 15:26, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):