Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions

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'''Feedback to this page''': '''[mailto:LabAdviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Copper click here]'''
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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


= Deposition of Cu =
= Deposition of Cu =
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment.
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.
 
==Studies of Cu deposition==
 
[[/Deposition of Copper/Resistive thermal evaporation of Copper|Resistive thermal evaporation of copper]]
 
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator'' - this particular machine has been decommissioned, but the results may still be of interest.
 
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cu:_Low_stress|Stress in sputtered Cu]] - ''Low stress in Cu films sputtered with the Sputter-System (Lesker)''




==Comparison of equipment for Cu deposition==
{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  


! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|Sputter deposition of Cu
|Sputter deposition of Cu
(not line-of-sight deposition)
(not line-of-sight deposition)
 
|Sputter deposition of Cu
(not line-of-sight deposition)
|-
|-


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!Pre-clean
!Pre-clean
|Ar ion bombardment
|Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
|RF Ar clean
|RF Ar clean


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!Layer thickness
!Layer thickness
|10Å to 1µm*
|10Å to 1µm*
|10Å to 1µm**
|10Å to 1µm**  
|10Å to 1µm**  


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! Deposition rate
! Deposition rate
|/s to 10Å/s
|1-10 Å/s
| ~1Å/s
|~ 1 Å/s
|Depends on process parameters, at least up to 8.7 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|-
|-


Line 52: Line 69:
*smaller pieces
*smaller pieces
*Up to 1x6" wafers
*Up to 1x6" wafers
|
*Up to 10x4" or 6" wafers
*or many smaller pieces
|-
|-


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|
|
*Silicon
* Almost any that does not degas - also if you plan to use heating.
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]


|
|
* Silicon
* Almost any that does not degas.
* Silicon oxide
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|-style="background:WhiteSmoke; color:black"
! Comment
|As of March 2020, Cu has not yet been deposited in this machine.  
Please contact the Thin Film group to develop a process.
|
|
*Almost that does not degas also if you plan to heat the substrate - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|}
|}


'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
'''*''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
 
'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
 
== Studies of Cu deposition processes ==


[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator''
'''**''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cu:_Low_stress|Stress in sputtered Cu]] - ''Low stress in Cu films sputtered with the Sputter-System (Lesker)'']]

Latest revision as of 15:07, 9 February 2024

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Deposition of Cu

Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.

Studies of Cu deposition

Resistive thermal evaporation of copper

Roughness of Cu layers - Roughness of Cu layers deposited with the Alcatel e-beam evaporator - this particular machine has been decommissioned, but the results may still be of interest.

Stress in sputtered Cu - Low stress in Cu films sputtered with the Sputter-System (Lesker)


Comparison of equipment for Cu deposition

E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Cu

(line-of-sight deposition)

Sputter deposition of Cu

(not line-of-sight deposition)

Sputter deposition of Cu

(not line-of-sight deposition)

Pre-clean Ar ion etch (only in E-beam evaporator Temescal) RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm** 10Å to 1µm**
Deposition rate 1-10 Å/s ~ 1 Å/s Depends on process parameters, at least up to 8.7 Å/s, see conditions here
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
  • Up to 10x4" or 6" wafers
  • or many smaller pieces
Allowed materials
  • Almost that does not degas also if you plan to heat the substrate - see cross contamination sheets for PC1 and PC3

* To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

** To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)