Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

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Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.
Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.


==Thermal deposition==
==Resistive Thermal evaporation==
* [[/Thermal Ge deposition Wordentec|Thermal deposition of Ge in Wordentec]]
* [[/Thermal Ge deposition Wordentec|Thermal deposition of Ge in Wordentec]]


* [[/Thermal Ge evaporation Thermal Evaporator|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]]


==Ge deposition equipment comparison==
==Ge deposition equipment comparison==
Line 18: Line 19:
!  
!  
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
|Thermal deposition of Ge
|Thermal deposition of Ge
|Thermal deposition of Ge
|E-beam deposition of Ge
|E-beam deposition of Ge
Line 35: Line 38:
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|-
|none
|Ar ion beam clean
|none
|Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to about 2000Å (in total distributed on all loaded wafers)
|10 Å to about 2000 Å (in total distributed on all loaded wafers)
|10Å to about 1000 nm  
|10 Å to about 2000 Å
|10Å to at least 1000 Å
|few nm to about 1 µm*
|10Å to ?
|10 Å to at least 1000 Å
|10 Å to ?
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|From 0.4 Å/s up to about ~2Å/s  
|0.4 Å/s - ~ 2 Å/s
|From 1 Å/s up to 5 Å/s  
|1 Å/s  
|1 Å/s - 5 Å/s  
|Depends on deposition parameters
|Depends on deposition parameters
|Depends on deposition parameters
|Depends on deposition parameters
Line 61: Line 68:
*6x 4" wafers or
*6x 4" wafers or
*6x 6" wafers or
*6x 6" wafers or
Many small pieces
|
*4x 2" wafers or
*3x 4" wafers or
*1x 6" wafers or
*1x 8" wafers or
Many small pieces
Many small pieces
|
|
Line 80: Line 93:
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Allowed substrates
! Allowed materials
|
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
|
|
*Almost any that does not degas. See also the cross-contamination sheet
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
|
|
*Almost any that does not degas. See also the cross-contamination sheet
Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
 
|
|
*Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheet
*Almost any that does not degas at your intended substrate temperature.  
|
|
*Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheets
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"


!Allowed materials


|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
*Almost any as above
|
*Almost any as above
|-style="background:LightGrey; color:black"
! Comment
|Recommended for unexposed e-beam resist
|
|
|
|}
|}
'''*'''  ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine.

Latest revision as of 17:15, 7 February 2024

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All text by DTU Nanolab staff

Deposition of Germanium

Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.

Resistive Thermal evaporation

Ge deposition equipment comparison


Thermal evaporation (Wordentec) Thermal evaporation (Thermal Evaporator) E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Sputtering (Lesker) Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description Thermal deposition of Ge Thermal deposition of Ge E-beam deposition of Ge Sputter deposition of Ge Sputter deposition of Ge
Pre-clean none none Ar ion etch (only in E-beam evaporator Temescal) RF Ar clean RF Ar clean
Layer thickness 10 Å to about 2000 Å (in total distributed on all loaded wafers) 10 Å to about 2000 Å few nm to about 1 µm* 10 Å to at least 1000 Å 10 Å to ?
Deposition rate 0.4 Å/s - ~ 2 Å/s 1 Å/s 1 Å/s - 5 Å/s Depends on deposition parameters Depends on deposition parameters
Batch size
  • 24x 2" wafers or
  • 6x 4" wafers or
  • 6x 6" wafers or

Many small pieces

  • 4x 2" wafers or
  • 3x 4" wafers or
  • 1x 6" wafers or
  • 1x 8" wafers or

Many small pieces

  • Up to 4 x 6" wafer or
  • 3x 8" wafers (ask for special holder)
  • Many smaller pieces
  • 1x6" wafer or
  • 1x4" wafer or

smaller pieces

  • 10x6" or 4" wafers
  • many smaller pieces
Allowed materials

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas at your intended substrate temperature. See the cross-contamination sheet.

  • Almost any that does not degas at your intended substrate temperature.
  • Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3

* For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine.

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