Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions
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''All text by DTU Nanolab staff'' | |||
== Deposition of Germanium == | == Deposition of Germanium == | ||
Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering. | Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering. | ||
==Thermal | ==Resistive Thermal evaporation== | ||
* [[/Thermal Ge deposition Wordentec|Thermal deposition of Ge in Wordentec]] | * [[/Thermal Ge deposition Wordentec|Thermal deposition of Ge in Wordentec]] | ||
* [[/Thermal Ge evaporation Thermal Evaporator|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]] | |||
==Ge deposition equipment comparison== | ==Ge deposition equipment comparison== | ||
| Line 17: | Line 19: | ||
! | ! | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster- | ! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
|- | |- | ||
| Line 26: | Line 28: | ||
! General description | ! General description | ||
|Thermal deposition of Ge | |Thermal deposition of Ge | ||
| | |Thermal deposition of Ge | ||
|E-beam deposition of Ge | |E-beam deposition of Ge | ||
|Sputter deposition of Ge | |Sputter deposition of Ge | ||
| Line 36: | Line 38: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
| | |none | ||
| | |none | ||
|Ar ion beam | |Ar ion etch (only in E-beam evaporator Temescal) | ||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
| | |10 Å to about 2000 Å (in total distributed on all loaded wafers) | ||
| | |10 Å to about 2000 Å | ||
| | |few nm to about 1 µm* | ||
| | |10 Å to at least 1000 Å | ||
| | |10 Å to ? | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
| | |0.4 Å/s - ~ 2 Å/s | ||
| | |1 Å/s | ||
| | |1 Å/s - 5 Å/s | ||
|Depends on deposition parameters | |Depends on deposition parameters | ||
|Depends on deposition parameters | |Depends on deposition parameters | ||
| Line 67: | Line 70: | ||
Many small pieces | Many small pieces | ||
| | | | ||
* | *4x 2" wafers or | ||
*1x | *3x 4" wafers or | ||
* | *1x 6" wafers or | ||
*1x 8" wafers or | |||
Many small pieces | |||
| | | | ||
*Up to 4 x 6" wafer or | *Up to 4 x 6" wafer or | ||
| Line 88: | Line 93: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Allowed | ! Allowed materials | ||
| | | | ||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]. | |||
| | | | ||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]. | |||
| | | | ||
Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]. | |||
| | | | ||
*Almost any that does not degas at your intended substrate temperature. | *Almost any that does not degas at your intended substrate temperature. | ||
| | | | ||
*Almost any that does not degas at your intended substrate temperature. See | *Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3] | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|} | |} | ||
'''*''' ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine. | |||
Latest revision as of 17:15, 7 February 2024
Feedback to this page: click here
All text by DTU Nanolab staff
Deposition of Germanium
Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.
Resistive Thermal evaporation
Ge deposition equipment comparison
| Thermal evaporation (Wordentec) | Thermal evaporation (Thermal Evaporator) | E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | Sputtering (Lesker) | Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
|---|---|---|---|---|---|
| General description | Thermal deposition of Ge | Thermal deposition of Ge | E-beam deposition of Ge | Sputter deposition of Ge | Sputter deposition of Ge |
| Pre-clean | none | none | Ar ion etch (only in E-beam evaporator Temescal) | RF Ar clean | RF Ar clean |
| Layer thickness | 10 Å to about 2000 Å (in total distributed on all loaded wafers) | 10 Å to about 2000 Å | few nm to about 1 µm* | 10 Å to at least 1000 Å | 10 Å to ? |
| Deposition rate | 0.4 Å/s - ~ 2 Å/s | 1 Å/s | 1 Å/s - 5 Å/s | Depends on deposition parameters | Depends on deposition parameters |
| Batch size |
Many small pieces |
Many small pieces |
|
smaller pieces |
|
| Allowed materials |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas at your intended substrate temperature. See the cross-contamination sheet. |
|
* For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine.