Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
!Recipe settings
!Recipe settings
!Comments
!SEM gallery
!SEM gallery
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px">


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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px">


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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px">
File:C10025_03__11.jpg
File:C10025_03__11.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px">
File:C10026_03__05.jpg
File:C10026_03__05.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="6" widths="200px" heights="150px">
File:C10082_11.jpg
File:C10082_11.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px">
File:C10084_15.jpg
File:C10084_15.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px">
File:C10093_03__11.jpg
File:C10093_03__11.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="7" widths="200px" heights="150px">
File:C10101_03__12.jpg
File:C10101_03__12.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
File:C10102_03__05.jpg
File:C10102_03__05.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
File:C10110_04.jpg
File:C10110_04.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
File:C10119_01.jpg
File:C10119_01.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''14 min etch''' (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''14 min etch''' (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
File:C10160_02.jpg
File:C10160_02.jpg
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''10 min etch''', H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''10 min etch''', H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
File:C10161_01.jpg
File:C10161_01.jpg
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*'''Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A''''  
*'''Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A''''  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
File:C10184_01.jpg
File:C10184_01.jpg
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:2500W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:2500W" perrow="7" widths="200px" heights="150px">
File:C10381_04.jpg
File:C10381_04.jpg
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:225sccm O2:0sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:225sccm O2:0sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px">
File:C10393_04.jpg
File:C10393_04.jpg
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px">
File:C10399_01.jpg
File:C10399_01.jpg
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0" perrow="7" widths="200px" heights="150px">
File:C10576_02.jpg
File:C10576_02.jpg
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
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<gallery caption=" C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W" perrow="7" widths="200px" heights="150px">
<gallery caption=" C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W" perrow="7" widths="200px" heights="150px">
File:C10751_02.jpg
File:C10751_02.jpg
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
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<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
File:C10752_01.jpg
File:C10752_01.jpg
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
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<gallery caption=" C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
File:C10834_12.jpg
File:C10834_12.jpg
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
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<gallery caption=" C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W" perrow="6" widths="200px" heights="150px">
File:C10844_02.jpg
File:C10844_02.jpg

Revision as of 15:39, 6 February 2024

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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab

SiO2 trench etching with Cr mask

Start parameters, variations noted in the gallery headline Recipe name: no 10 with lower platen power
Coil Power [W] 2500
Platen Power [W] 200
Platen temperature [oC] 20
H2 flow [sccm] 25.6
C4F8 flow [sccm] 25.6
He flow [sccm] 448.7
Pressure Fully open APC valve (8-9 mTorr)
Electromagnetic coils (EM) 'outer coil' / 'inner coil' '2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN)
  • 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
Cr mask before SiO2 etch 800 nm pitch 50% duty cycle. The The Cr linewidth is clearly less than designed


Results

Temporary conclusions on how the process parameters affect the results in this study: What process parameters affect the results?
  • Going from full wafer to small piece on Si carrier:
    • Seemed to give more sidewall passivation
  • Platen power: lowering the platen power gives
    • more sidewall passivation
    • lower etch rate
    • Less trenching
  • Removing the H2 gave:
    • less sidewall passivation
  • Adding O2 gave:
    • less sidewall passivation
  • Process pressure/total gasflow rate
    • Reducing total gasflow rate which reduced the pressur inside the chamber gave:
      • less sidewall passivation
      • Reduced the CD (Critical Dimensions)
  • Coil power: Reducing coil power
    • less CD loss
    • more sidewall passivation
  • Increasing process time:
    • less sidewall passivation
    • more sidewall bow
    • CD loss due to larger mask faceting
  • Sidewall passivation↑
    • Sample size↓
    • Platen power↓
    • Coil power↓
    • H2 flow↑
    • O2 flow↓
    • Total gas flow rate/pressure↑

Profile SEM images

Recipe settings Comments SEM gallery
  • On 6" wafer
  • Coil Power [W]:2500
  • Platen Power [W]: 200
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:25.6
  • C4F8 flow [sccm]: 25.6
  • He flow [sccm]:448.7
  • Pressure:Fully open APC valve (8-9 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on full wafer 6 min etch
  • C09721 center 10.jpg
  • C09721 center 18.jpg
  • C09721 center 21.jpg
  • C09721 center 07.jpg
  • C09721 center 05.jpg
  • C09721 center 22.jpg
  • Piece on Si carrier
  • Coil Power [W]:2500
  • Platen Power [W]: 200
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:25.6
  • C4F8 flow [sccm]: 25.6
  • He flow [sccm]:448.7
  • Pressure:Fully open APC valve (8-9 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
  • C10022 03 06.jpg
  • C10022 03 04.jpg
  • C10022 03 02.jpg
  • C10022 03 08.jpg
  • C10022 03 10.jpg
  • C10022 03 12.jpg
  • Coil Power [W]:2500
  • Platen Power [W]: 200
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • C4F8 flow [sccm]: 25.6
  • He flow [sccm]:448.7
  • Pressure:Fully open APC valve (8-9 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
  • C10025 03 11.jpg
  • C10025 03 09.jpg
  • C10025 03 07.jpg
  • C10025 03 05.jpg
  • C10025 03 03.jpg
  • C10025 03 01.jpg
  • Coil Power [W]:2500
  • Platen Power [W]: 200
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 5
  • C4F8 flow [sccm]: 25.6
  • He flow [sccm]:448.7
  • Pressure:Fully open APC valve (8-9 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
  • C10026 03 05.jpg
  • C10026 03 03.jpg
  • C10026 03 01.jpg
  • C10026 03 07.jpg
  • C10026 03 09.jpg
  • C10026 03 10.jpg
  • Coil Power [W]:2500
  • Platen Power [W]: 200
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 0
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:225
  • Pressure:Fully open APC valve (3.35 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr
  • C10082 11.jpg
  • C10082 09.jpg
  • C10082 07.jpg
  • C10082 05.jpg
  • C10082 03.jpg
  • C10082 01.jpg
  • C010082top 07.jpg
  • C010082top 03.jpg
  • C010082tilt30 13.jpg
  • Coil Power [W]:1200
  • Platen Power [W]: 150
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 0
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:225
  • Pressure:Fully open APC valve (3.35 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W
  • C10084 15.jpg
  • C10084 13.jpg
  • C10084 11.jpg
  • C10084 09.jpg
  • C10084 06.jpg
  • C10084 03.jpg
  • Coil Power [W]:1200
  • Platen Power [W]: 150
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 10
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:215
  • Pressure:Fully open APC valve (3.35 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
  • C10093 03 11.jpg
  • C10093 03 09.jpg
  • C10093 03 07.jpg
  • C10093 03 05.jpg
  • C10093 03 03.jpg
  • C10093 03 01.jpg
  • Coil Power [W]:1200
  • Platen Power [W]: 150
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 20
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:205
  • Pressure:Fully open APC valve (3.35 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
  • C10101 03 12.jpg
  • C10101 03 10.jpg
  • C10101 03 07.jpg
  • C10101 03 05.jpg
  • C10101 03 03.jpg
  • C10101 03 01.jpg
  • C10101 03 14.jpg
  • Coil Power [W]:1800
  • Platen Power [W]: 150
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 10
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:215
  • Pressure:Fully open APC valve (3.35 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
  • C10102 03 05.jpg
  • C10102 03 03.jpg
  • C10102 03 01.jpg
  • C10102 03 20.jpg
  • C10102 03 18.jpg
  • C10102 03 16.jpg
  • Coil Power [W]:1800
  • Platen Power [W]: 150
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 20
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:205
  • Pressure:Fully open APC valve (3.6 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
  • C10110 04.jpg
  • C10110 06.jpg

  • pitch 800 nm
    Top 461 nm
    @edge 437 nm
    bottom 402 nm
    height 916 nm
    height from edge 827 nm
    Cr left 83.5 nm
    selectivity 55.5

  • 156 nm/min

  • C10110 12.jpg
  • Coil Power [W]:1200
  • Platen Power [W]: 100
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 20
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:205
  • Pressure:Fully open APC valve (3.6 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
  • C10119 01.jpg
  • C10119 03.jpg

  • pitch 800 nm
    Top 444 nm
    bottom 374 nm
    height 718 nm
    Cr left 85 nm
    selectivity 48

  • C10119 06.jpg
  • C10119 09.jpg
  • C10119 11.jpg
  • Coil Power [W]:1200
  • Platen Power [W]: 100
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 20
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:205
  • Pressure:Fully open APC valve (3.6 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
  • C10160 02.jpg
  • C10160 06.jpg
  • C10160 09.jpg
  • C10160 12.jpg
  • C10160 15.jpg
  • C10160 17.jpg

  • Etch on none patterned wafer, Uniformity: +- 6.4%

  • Coil Power [W]:1800
  • Platen Power [W]: 150
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 20
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:205
  • Pressure:Fully open APC valve (3.6 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
  • PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
  • C10161 01.jpg
  • C10161 03.jpg
  • C10161 05.jpg
  • C10161 07.jpg
  • C10161 09.jpg
  • C10161 11.jpg
  • C010161top 01.jpg
  • C010161tilt 04.jpg
  • Coil Power [W]:1200
  • Platen Power [W]: 100
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 20
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:205
  • Pressure:Fully open APC valve (3.9 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W
  • C10184 01.jpg
  • C10184 05.jpg
  • C10184 07.jpg
  • C10184 09.jpg
  • C10184 11.jpg
  • C10184 12.jpg

  • Etch on none patterned wafer, Uniformity: +-1.7%

  • C010184top 01.jpg
  • C010184top 04.jpg

  • tilt 30 degrees

  • tilt 30 degrees

  • tilt 20 degrees

  • tilt 20 degrees

  • Coil Power [W]:2500
  • Platen Power [W]: 100
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 20
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:205
  • Pressure:Fully open APC valve (3.9 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:2500W
  • C10381 04.jpg
  • C10381 06.jpg
  • C10381 07.jpg
  • C10381 30dg 17.jpg
  • C10381 30dg 21.jpg
  • Coil Power [W]:2500
  • Platen Power [W]: 200
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 0
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:225
  • Pressure:Fully open APC valve (3.9 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:225sccm O2:0sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W
  • C10393 04.jpg
  • C10393 06.jpg
  • C10393 09.jpg
  • C10393 11.jpg
  • C10393 12.jpg
  • C10393 14.jpg
  • C10393 16.jpg
  • 14 min
  • Coil Power [W]:2500
  • Platen Power [W]: 200
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 20
  • C4F8 flow [sccm]: 13.0
  • He flow [sccm]:205
  • Pressure:Fully open APC valve (3.9 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W
  • C10399 01.jpg
  • C10399 02.jpg
  • C10399 04.jpg
  • C10399 08.jpg
  • C10399 10.jpg
  • C10399 13.jpg
  • Back to start setting without EM coils - 14 min
  • Coil Power [W]:2500
  • Platen Power [W]: 200
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:25.6
  • O2 flow [sccm]: 0
  • C4F8 flow [sccm]: 25.6
  • He flow [sccm]:448.7
  • Pressure:Fully open APC valve (8-9 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 text
  • SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0
  • C10576 02.jpg
  • C10576 01.jpg
  • C10576 04.jpg
  • C10576 06.jpg
  • C10576 08.jpg
  • C10576 10.jpg
  • C10576 19.jpg
  • C10576 22.jpg
  • C10576 17.jpg
  • Coil Power [W]:600
  • Platen Power [W]: 50
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 10
  • C4F8 flow [sccm]: 6.5
  • He flow [sccm]:100
  • Pressure:Fully open APC valve (<2 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 text
  • C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W
  • C10751 02.jpg
  • C10751 05.jpg
  • C10751 07.jpg
  • C10751 09.jpg
  • C10751 11.jpg
  • C10751 12.jpg
  • Coil Power [W]:300
  • Platen Power [W]: 25
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 10
  • C4F8 flow [sccm]: 6.5
  • He flow [sccm]:100
  • Pressure:Fully open APC valve (<2 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 text
  • C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W
  • C10752 01.jpg
  • C10752 03.jpg
  • C10752 05.jpg
  • C10752 07.jpg
  • C10752 09.jpg
  • C10752 10.jpg
  • 45 min
  • Coil Power [W]:300
  • Platen Power [W]: 25
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 10
  • C4F8 flow [sccm]: 6.5
  • He flow [sccm]:100
  • Pressure:Fully open APC valve (<2 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 text
  • C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W
  • C10834 12.jpg
  • C10834 10.jpg
  • C10834 08.jpg
  • C10834 06.jpg
  • C10834 02.jpg
  • C10834 04.jpg
  • C10834T 17.jpg
  • C10834T 15.jpg
  • C10834T 20.jpg
  • C10834T 19.jpg
  • C10834T 21.jpg
  • C10834T 22.jpg
  • Coil Power [W]:300
  • Platen Power [W]: 20
  • Platen temperature [oC]: 20
  • H2 flow [sccm]:0
  • O2 flow [sccm]: 10
  • C4F8 flow [sccm]: 6.5
  • He flow [sccm]:100
  • Pressure:Fully open APC valve (<2 mTorr)
  • Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 text
  • C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W
  • C10844 02.jpg
  • C10844 05.jpg
  • C10844 09.jpg
  • C10844 07.jpg
  • C10844 11.jpg
  • C10844 13.jpg
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