Revision as of 14:23, 6 February 2024

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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab

SiO2 trench etching with Cr mask

Start parameters, variations noted in the gallery headline	Recipe name: no 10 with lower platen power
Coil Power [W]	2500
Platen Power [W]	200
Platen temperature [^oC]	20
H2 flow [sccm]	25.6
C₄F₈ flow [sccm]	25.6
He flow [sccm]	448.7
Pressure	Fully open APC valve (8-9 mTorr)
Electromagnetic coils (EM) 'outer coil' / 'inner coil'	'2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN)

100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.

Cr mask before SiO2 etch 800 nm pitch 50% duty cycle. The The Cr linewidth is clearly less than designed

Results

Temporary conclusions on how the process parameters affect the results in this study:

What process parameters affect the results?

Going from full wafer to small piece on Si carrier:
- Seemed to give more sidewall passivation
Platen power: lowering the platen power gives
- more sidewall passivation
- lower etch rate
- Less trenching
Removing the H2 gave:
- less sidewall passivation
Adding O2 gave:
- less sidewall passivation
Process pressure/total gasflow rate
- Reducing total gasflow rate which reduced the pressur inside the chamber gave:
  - less sidewall passivation
  - Reduced the CD (Critical Dimensions)
Coil power: Reducing coil power
- less CD loss
- more sidewall passivation
Increasing process time:
- less sidewall passivation
- more sidewall bow
- CD loss due to larger mask faceting

Sidewall passivation↑
- Sample size↓
- Platen power↓
- Coil power↓
- H2 flow↑
- O2 flow↓
- Total gas flow rate/pressure↑

Profile SEM images

Recipe settings	SEM gallery
Coil Power [W]:2500 Platen Power [W]: 200 Platen temperature [^oC]: 20 H2 flow [sccm]:25.6 C₄F₈ flow [sccm]: 25.6 He flow [sccm]:448.7 Pressure:Fully open APC valve (8-9 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on full wafer 6 min etch
Coil Power [W]:2500 Platen Power [W]: 200 Platen temperature [^oC]: 20 H2 flow [sccm]:25.6 C₄F₈ flow [sccm]: 25.6 He flow [sccm]:448.7 Pressure:Fully open APC valve (8-9 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
Coil Power [W]:2500 Platen Power [W]: 200 Platen temperature [^oC]: 20 H2 flow [sccm]:0 C₄F₈ flow [sccm]: 25.6 He flow [sccm]:448.7 Pressure:Fully open APC valve (8-9 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
Coil Power [W]:2500 Platen Power [W]: 200 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 5 C₄F₈ flow [sccm]: 25.6 He flow [sccm]:448.7 Pressure:Fully open APC valve (8-9 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
Coil Power [W]:2500 Platen Power [W]: 200 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 0 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:225 Pressure:Fully open APC valve (3.35 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr
Coil Power [W]:1200 Platen Power [W]: 150 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 0 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:225 Pressure:Fully open APC valve (3.35 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W
Coil Power [W]:1200 Platen Power [W]: 150 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 10 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:215 Pressure:Fully open APC valve (3.35 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
Coil Power [W]:1200 Platen Power [W]: 150 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 20 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:205 Pressure:Fully open APC valve (3.35 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
Coil Power [W]:1800 Platen Power [W]: 150 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 10 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:215 Pressure:Fully open APC valve (3.35 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
Coil Power [W]:1800 Platen Power [W]: 150 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 20 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:205 Pressure:Fully open APC valve (3.6 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W pitch 800 nm Top 461 nm @edge 437 nm bottom 402 nm height 916 nm height from edge 827 nm Cr left 83.5 nm selectivity 55.5 156 nm/min
Coil Power [W]:1800 Platen Power [W]: 150 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 20 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:205 Pressure:Fully open APC valve (3.6 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W pitch 800 nm Top 444 nm bottom 374 nm height 718 nm Cr left 85 nm selectivity 48
Coil Power [W]:1200 Platen Power [W]: 100 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 20 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:205 Pressure:Fully open APC valve (3.6 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W Etch on none patterned wafer, Uniformity: +- 6.4%
Coil Power [W]:1800 Platen Power [W]: 150 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 20 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:205 Pressure:Fully open APC valve (3.6 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN	SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
Coil Power [W]:1200 Platen Power [W]: 100 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 20 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:205 Pressure:Fully open APC valve (3.9 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'	SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W Etch on none patterned wafer, Uniformity: +-1.7%
Coil Power [W]:2500 Platen Power [W]: 100 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 20 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:205 Pressure:Fully open APC valve (3.9 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'	SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:2500W
Coil Power [W]:2500 Platen Power [W]: 200 Platen temperature [^oC]: 20 H2 flow [sccm]:0 O2 flow [sccm]: 0 C₄F₈ flow [sccm]: 13.0 He flow [sccm]:225 Pressure:Fully open APC valve (3.9 mTorr) Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'	SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:225sccm O2:0sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W
Text	SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W
Text	SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0
Text	C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W
Text	C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W
Text	C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W
Text	C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W

Profile, top view at tilted SEM images on 800 nm pitch and 50% duty cycle ( look at the Cr mask in top of the page

SiO2 etch with Cr mask on full wafer 6 min etch

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
pitch 800 nm
Top 461 nm
@edge 437 nm
bottom 402 nm
height 916 nm
height from edge 827 nm
Cr left 83.5 nm
selectivity 55.5

SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
pitch 800 nm
Top 444 nm
bottom 374 nm
height 718 nm
Cr left 85 nm
selectivity 48

SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W

SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W

SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W, the mask is removed by plasma ashing on top view and tilted view
tilt 30 degrees
tilt 30 degrees
tilt 20 degrees
tilt 20 degrees

@@ Line 382: / Line 382: @@
 </gallery>
 |-
-|Text
+|
+*Coil Power [W]:2500
+*Platen Power [W]: 100
+*Platen temperature [<sup>o</sup>C]: 20
+*H2 flow [sccm]:0
+*O2 flow [sccm]: 20
+*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
+*He flow [sccm]:205
+*Pressure:Fully open APC valve (3.9 mTorr)
+*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 |
 <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:2500W" perrow="7" widths="200px" heights="150px">
@@ Line 392: / Line 401: @@
 </gallery>
 |-
-|Text
+|
+*Coil Power [W]:2500
+*Platen Power [W]: 200
+*Platen temperature [<sup>o</sup>C]: 20
+*H2 flow [sccm]:0
+*O2 flow [sccm]: 0
+*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
+*He flow [sccm]:225
+*Pressure:Fully open APC valve (3.9 mTorr)
+*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
 |
 <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:225sccm O2:0sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px">

Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

Revision as of 14:23, 6 February 2024

Contents

SiO2 trench etching with Cr mask

Results

Profile SEM images

Profile, top view at tilted SEM images on 800 nm pitch and 50% duty cycle ( look at the Cr mask in top of the page

Navigation menu

Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

Revision as of 14:23, 6 February 2024

SiO2 trench etching with Cr mask

Results

Profile SEM images

Profile, top view at tilted SEM images on 800 nm pitch and 50% duty cycle ( look at the Cr mask in top of the page

Navigation menu

Search