Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
Line 2: | Line 2: | ||
Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silicon etch recipe: OH_PolyA which is based on SF6. It can also be etched using the recipe 1Nitride which is based on CHF3. The difference of these two etches has not been investigate in details. Look in the table below to see what we know | Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silicon etch recipe: OH_PolyA which is based on SF6. It can also be etched using the recipe 1Nitride which is based on CHF3. The difference of these two etches has not been investigate in details. Look in the table below to see what we know | ||
Some RIE recipes for etching of silicon nitride: | |||
{| border="1" cellspacing="0" cellpadding="7" | |||
!Name | |||
!SF6 flow | |||
!O2 flow | |||
!CHF3 flow | |||
!N2 flow | |||
!Pressure | |||
!Power | |||
|- | |||
|OH_PolyA | |||
|32 sccm | |||
|8 sccm | |||
| | |||
| | |||
|80 mTorr | |||
|30 W | |||
|- | |||
|BGE-NITR | |||
| | |||
| | |||
|8 sccm | |||
|32 sccm | |||
|38 mTorr | |||
|50 W | |||
|- | |||
|} |
Revision as of 14:34, 5 November 2007
For a general introduction to RIE at Danchip see RIE (Reactive Ion Etch)
Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silicon etch recipe: OH_PolyA which is based on SF6. It can also be etched using the recipe 1Nitride which is based on CHF3. The difference of these two etches has not been investigate in details. Look in the table below to see what we know
Some RIE recipes for etching of silicon nitride:
Name | SF6 flow | O2 flow | CHF3 flow | N2 flow | Pressure | Power |
---|---|---|---|---|---|---|
OH_PolyA | 32 sccm | 8 sccm | 80 mTorr | 30 W | ||
BGE-NITR | 8 sccm | 32 sccm | 38 mTorr | 50 W |