Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
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== Sputter deposition of Silver == | |||
* [[/Sputter Ag in Wordentec|Sputter deposition of Silver in Wordentec]]. | |||
== Thermal deposition of Silver == | |||
* [[/Deposition of Silver|Thermal deposition of Silver in Wordentec]] | |||
* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]] | |||
==Comparison of deposition equipment for silver== | |||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/ | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | |||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
! General description | |||
| E-beam deposition of Ag (line-of-sight, very good thickness uniformity) | |||
| Thermal deposition of Ag (line-of-sight) | |||
| Thermal deposition of Ag (line-of-sight, good thickness uniformity) | |||
| Sputter deposition of Ag (some step coverage, should have good uniformity) | |||
| Sputter deposition of Ag (some step coverage) | |||
| Sputter deposition of Ag including pulsed DC and HiPIMS | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
! Pre-clean | |||
| Ar ion etch (only in E-beam evaporator Temescal) | |||
| none | |||
| none | |||
| none | |||
| RF Ar clean | |||
| RF Ar clean | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
! Layer thickness | |||
|10Å to 1µm* | |||
|10Å to 0.5µm ** | |||
|10Å to 0.5µm **(0.5µm not on all wafers) | |||
|10Å to about 3000Å | |||
|10Å to about 2000Å | |||
|10Å to ? | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
! Deposition rate | |||
|1 to 10Å/s | |||
|5Å/s | |||
|1 to 10Å/s | |||
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | |||
|Dependent on process parameters. | |||
|Dependent on process parameters. | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Batch size | ! Batch size | ||
| | | | ||
*Up to | *Up to 4x6" wafers or | ||
*Up to 3x8" wafers *** or | |||
*smaller pieces | |||
| | |||
*Up to 1x8" wafer or 1x6" wafer | |||
*Up to 3x4" wafers | |||
*smaller pieces | *smaller pieces | ||
| | | | ||
| Line 30: | Line 88: | ||
*6x4" wafers or | *6x4" wafers or | ||
*24x2" wafers | *24x2" wafers | ||
| | | | ||
*6x6" wafers or | *6x6" wafers or | ||
*6x4" wafers or | *6x4" wafers or | ||
*24x2" wafers | *24x2" wafers | ||
| | |||
*1x6" wafers or | |||
| | *1x4" wafers or | ||
*smaller pieces | |||
| | |||
*up to 10x6" wafers or | |||
*up to 10x4" wafers or | |||
*many smaller pieces | |||
|-style="background:Lightgrey; color:black" | |||
!Allowed materials | |||
| | |||
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | |||
| | |||
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | |||
| | |||
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | |||
| | |||
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | |||
| | |||
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | |||
| | |||
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | |||
|-style="background:whitesmoke; color:black" | |||
! Comment | |||
| Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage. | |||
| Pumpdown approx 15 min. | |||
| Only very thin layers. Pumpdown approx 1.5 hours. | |||
| Pumpdown approx. 1.5 hours | |||
|Load and transfer < 10 minutes | |||
|Load and transfer approx. 12 minutes | |||
|- | |- | ||
| | |} | ||
'''*''' ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk'' | |||
'''**''' ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk'' | |||
'''***''' ''Please ask responsible staff for 8" wafer holder'' | |||