Specific Process Knowledge/Thin film deposition/DiamondCVD: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/DiamondCVD click here]''' | ||
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
== SEKI Diamond CVD - this machine is not in active use (2023) == | |||
[[File:diamond cvd seki.png|upright=2|alt=On the left is a tall instrument rack with various panels and control screens. It says "Seki technotron" on top. There are indicator lamps and an EMO button. On the right is the processing chamber which is relatively small, it's a cylindrical vacuum chamber with a small window facing the viewer. It's connected to gas lines and an exhaust system on top. There's a large panel covering the lower part of the instrument.|right|thumb|The SEKI diamond CVD in cleanroom B-1]] | |||
The SEKI AX5250S is a Microwave Plasma Chemical Vapor Deposition (MPCVD) system for growth of diamond thin films. The system is fitted with hydrogen, methane, and oxygen for diamond growth. '''Notice that this machine is rather manual and we don't have a stable process running on it. It would require a significant of work to develop a reliable process for depositing good-quality diamond for different applications. Therefore the machine will probably be decommissioned, though you are welcome to contact the [mailto:thinfilm@nanolab.dtu.dk Thin Film group] if you are interested in using it as it is still in the cleanroom as of Jan 2024. | |||
''' | |||
Depending on the starting material both polycrystalline and single crystalline diamond can be grown. Diamond has a lattice constant of 3.567 Å, which is not easily matched to other materials, and therefore in general diamond growth must be seeded by diamond as nucleation sites. | |||
For single crystalline diamond this means that diamond layers in most cases must be grown on top of single crystal diamonds. For polycrystalline diamond, almost any material will do as long as it can withstand a growth temperature of 800 °C. It just needs to be seeded with nano diamonds. The seeding can happen by immersion into solution, by polishing, or by spray coating with nano diamonds. | |||
'''The user manual, APV, technical information, and contact information can be found in LabManager:''' | |||
== | [http://labmanager.nanolab.dtu.dk/function.php?module=Machine&view=view&mach=397 Diamond CVD in LabManager] | ||
<br clear="all" /> | |||
===More details=== | |||
*[[/Diamond CVD process details|Further information on processing conditions and diamond growth]] | |||
==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||
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H<sub>2</sub> | H<sub>2</sub> | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
1000 sccm | Up to 1000 sccm | ||
|- | |- | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
CH<sub>4</sub> | CH<sub>4</sub> | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
50 sccm | Up to 50 sccm | ||
|- | |- | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
O<sub>2</sub> | O<sub>2</sub> | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
20 sccm | Up to 20 sccm (may be reduced, check) | ||
|- | |- | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
Operating pressure | Operating pressure | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
>200 Torr | Max. >200 Torr (usually about 120 Torr for diamond growth) | ||
|- | |- | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
Power | Power | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
5000 W | Up to 5000 W | ||
|- | |- | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
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700-900 °C | 700-900 °C | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process | |||
|style="background:LightGrey; color:black"|Growth rate | |||
|style="background:WhiteSmoke; color:black"| | |||
About 8 Å/s (3 μm/hr) | |||
|- | |||
| style="background:LightGrey; color:black"|Max thickness | |||
|style="background:WhiteSmoke; color:black"| | |||
About 100 μm | |||
|- | |||
| style="background:LightGrey; color:black"|Uniformity | |||
|style="background:WhiteSmoke; color:black"| | |||
OK up to 50 mm diameter <br/> | |||
1 μm thickness needed to ensure substrate coverage | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Substrate size | |style="background:LightGrey; color:black"|Substrate size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
up to 100 mm wafers, 50 mm | up to 100 mm wafers, 50 mm preferred | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Allowed materials | | style="background:LightGrey; color:black"|Allowed materials |
Latest revision as of 12:35, 15 January 2024
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
SEKI Diamond CVD - this machine is not in active use (2023)
The SEKI AX5250S is a Microwave Plasma Chemical Vapor Deposition (MPCVD) system for growth of diamond thin films. The system is fitted with hydrogen, methane, and oxygen for diamond growth. Notice that this machine is rather manual and we don't have a stable process running on it. It would require a significant of work to develop a reliable process for depositing good-quality diamond for different applications. Therefore the machine will probably be decommissioned, though you are welcome to contact the Thin Film group if you are interested in using it as it is still in the cleanroom as of Jan 2024.
Depending on the starting material both polycrystalline and single crystalline diamond can be grown. Diamond has a lattice constant of 3.567 Å, which is not easily matched to other materials, and therefore in general diamond growth must be seeded by diamond as nucleation sites.
For single crystalline diamond this means that diamond layers in most cases must be grown on top of single crystal diamonds. For polycrystalline diamond, almost any material will do as long as it can withstand a growth temperature of 800 °C. It just needs to be seeded with nano diamonds. The seeding can happen by immersion into solution, by polishing, or by spray coating with nano diamonds.
The user manual, APV, technical information, and contact information can be found in LabManager:
More details
Equipment | SEKI AX5250S | |
---|---|---|
Purpose | Diamond growth |
|
Parameters |
H2 |
Up to 1000 sccm |
CH4 |
Up to 50 sccm | |
O2 |
Up to 20 sccm (may be reduced, check) | |
Operating pressure |
Max. >200 Torr (usually about 120 Torr for diamond growth) | |
Power |
Up to 5000 W | |
Temperature |
700-900 °C | |
Process | Growth rate |
About 8 Å/s (3 μm/hr) |
Max thickness |
About 100 μm | |
Uniformity |
OK up to 50 mm diameter | |
Substrates | Substrate size |
up to 100 mm wafers, 50 mm preferred |
Allowed materials |
Ask |