Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= '''30W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= '''30W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--'''Process time'''--> 10:00 | |<!--'''Process time'''--> 10:00 | ||
|<!--'''Date'''--> | |<!--'''Date'''--> 13/11/23 | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> [[File:nP CHF3_t1 22.5 10min 30WP-01.png|300px]] [[File:nP CHF3_t1 22.5 10min 30WP-03.png|300px]] | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> | ||
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|<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--'''Process time'''--> 10:00 | |<!--'''Process time'''--> 10:00 | ||
|<!--'''Date'''--> | |<!--'''Date'''--> 13/11/23 | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> [[File:nP CHF3_t1 22.5 10min 45WP-01.png|400px]] [[File:nP CHF3_t1 22.5 10min 45WP-04.png|400px]] | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> |
Revision as of 13:38, 14 December 2023
Recipes and results - CHF3 tests
Tests performed with AZ5214E resist: