Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= 25W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= 25W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--'''Process time'''--> '''10:00''' | |<!--'''Process time'''--> '''10:00''' | ||
|<!--'''Date'''--> | |<!--'''Date'''--> 23/10/23 | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Profile angles'''--> | |<!--'''Profile angles'''--> | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> 27 | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> 12,5 | ||
|<!--'''Selectivity (SiO2:resist)'''--> | |<!--'''Selectivity (SiO2:resist)'''--> 2.1 | ||
|- | |- | ||
|- | |- | ||
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|<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= 25W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= 25W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--'''Process time'''--> '''20:00''' | |<!--'''Process time'''--> '''20:00''' | ||
|<!--'''Date'''--> | |<!--'''Date'''--> 23/10/23 | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Etch rate in SiO2'''--> 8.15 | |||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in resist'''--> 7.5 | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Selectivity (SiO2:resist)'''--> 1.1 | ||
|<!--'''Selectivity (SiO2:resist)'''--> | |||
|- | |- | ||
|- | |- |
Revision as of 13:14, 14 December 2023
Recipes and results - CHF3 tests
Tests performed with AZ5214E resist:
Tests performed with 915nm UVN resist + 88nm BARC:
Recipe | Recipe parameters | Duration (min) | Date | SEM picture | Profile angles | Etch rate in SiO2 | Etch rate in resist (UVN) |
Selectivity (SiO2:resist) |
---|---|---|---|---|---|---|---|---|
CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 30W Press= 2.5mTorr Temp= 20°C |
10:00 | ||||||
CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 45W Press= 2.5mTorr Temp= 20°C |
10:00 | ||||||
CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 45W Press= 2.5mTorr Temp= 0°C |
10:00 | ||||||
CHF3_t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 | 23/10/23 | 27 | 12,5 | 2.1 | ||
CHF3_t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
20:00 | 23/10/23 | 8.15 | 7.5 | 1.1 |