Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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! '''Profile angles''' | ! '''Profile angles''' | ||
! '''Etch rate in SiO2''' | ! '''Etch rate in SiO2''' | ||
! '''Etch rate in resist <br> ( | ! '''Etch rate in resist <br> (UVN)''' | ||
! '''Selectivity <br> (SiO2:resist)''' | ! '''Selectivity <br> (SiO2:resist)''' | ||
|- | |- |
Revision as of 12:57, 14 December 2023
Recipes and results - CHF3 tests
Tests performed with AZ5214E resist:
Tests performed with 915nm UVN resist + 88nm BARC:
Recipe | Recipe parameters | Duration (min) | Date | SEM picture | Profile angles | Etch rate in SiO2 | Etch rate in resist (UVN) |
Selectivity (SiO2:resist) |
---|---|---|---|---|---|---|---|---|
CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 30W Press= 2.5mTorr Temp= 20°C |
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CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 45W Press= 2.5mTorr Temp= 20°C |
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CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 45W Press= 2.5mTorr Temp= 0°C |
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CHF3_t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |