Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch: Difference between revisions
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! '''Etch rate in resist <br> (AZ5214E inverse)''' | ! '''Etch rate in resist <br> (AZ5214E inverse)''' | ||
! '''Selectivity <br> (SiO2:resist)''' | ! '''Selectivity <br> (SiO2:resist)''' | ||
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|<!--'''Etch rate in resist'''--> 153,4 nm/min <br> +/- 16.7% | |<!--'''Etch rate in resist'''--> 153,4 nm/min <br> +/- 16.7% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 1.4 | |<!--'''Selectivity (SiO2:resist)'''--> 1.4 | ||
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|<!--'''Etch rate in resist'''--> 145,7 nm/min <br> +/- 25.1% | |<!--'''Etch rate in resist'''--> 145,7 nm/min <br> +/- 25.1% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 0.92 | |<!--'''Selectivity (SiO2:resist)'''--> 0.92 | ||
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Revision as of 12:29, 14 December 2023
More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch
Tests performed by Maria Farinha @DTU Nanolab
Recipes and results - CF4 / H2 tests