Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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! '''Etch rate in resist <br> (AZ5214E inverse)''' | ! '''Etch rate in resist <br> (AZ5214E inverse)''' | ||
! '''Selectivity <br> (SiO2:resist)''' | ! '''Selectivity <br> (SiO2:resist)''' | ||
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| Line 27: | Line 26: | ||
|<!--'''Etch rate in resist'''--> 57.3 nm/min <br> +/- 12.9% | |<!--'''Etch rate in resist'''--> 57.3 nm/min <br> +/- 12.9% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 1.22 | |<!--'''Selectivity (SiO2:resist)'''--> 1.22 | ||
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|<!--'''Etch rate in resist'''--> 24.2 nm/min <br> +/- 21.1% | |<!--'''Etch rate in resist'''--> 24.2 nm/min <br> +/- 21.1% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 1.1 | |<!--'''Selectivity (SiO2:resist)'''--> 1.1 | ||
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|<!--'''Etch rate in resist'''--> 1,8 nm/min <br> +/- 46.5% | |<!--'''Etch rate in resist'''--> 1,8 nm/min <br> +/- 46.5% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 5.4 | |<!--'''Selectivity (SiO2:resist)'''--> 5.4 | ||
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| Line 69: | Line 65: | ||
|<!--'''Etch rate in resist'''--> 47,5 nm/min <br> +/- 21.5% | |<!--'''Etch rate in resist'''--> 47,5 nm/min <br> +/- 21.5% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 1.25 | |<!--'''Selectivity (SiO2:resist)'''--> 1.25 | ||
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|<!--'''Etch rate in resist'''--> 130,8 nm/min <br> +/- 8.8% | |<!--'''Etch rate in resist'''--> 130,8 nm/min <br> +/- 8.8% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 0.46 | |<!--'''Selectivity (SiO2:resist)'''--> 0.46 | ||
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|<!--'''Etch rate in resist'''--> 26,4 nm/min <br> +/- 17,4% | |<!--'''Etch rate in resist'''--> 26,4 nm/min <br> +/- 17,4% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 1.8 | |<!--'''Selectivity (SiO2:resist)'''--> 1.8 | ||
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|<!--'''Etch rate in resist'''--> 17,5 nm/min <br> +/- 13.9% | |<!--'''Etch rate in resist'''--> 17,5 nm/min <br> +/- 13.9% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 2.09 | |<!--'''Selectivity (SiO2:resist)'''--> 2.09 | ||
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|<!--'''Etch rate in resist'''--> 23,8 nm/min <br> +/- 22.2% | |<!--'''Etch rate in resist'''--> 23,8 nm/min <br> +/- 22.2% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 1.76 | |<!--'''Selectivity (SiO2:resist)'''--> 1.76 | ||
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|<!--'''Etch rate in resist'''--> 74,9 nm/min <br> +/- 10.8% | |<!--'''Etch rate in resist'''--> 74,9 nm/min <br> +/- 10.8% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 1.01 | |<!--'''Selectivity (SiO2:resist)'''--> 1.01 | ||
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|<!--'''Etch rate in resist'''--> - | |<!--'''Etch rate in resist'''--> - | ||
|<!--'''Selectivity (SiO2:resist)'''--> no etch done,<br> polymer deposited | |<!--'''Selectivity (SiO2:resist)'''--> no etch done,<br> polymer deposited | ||
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|<!--'''Etch rate in resist'''--> 23,3 nm/min <br> +/- 13.7% | |<!--'''Etch rate in resist'''--> 23,3 nm/min <br> +/- 13.7% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 2.06 | |<!--'''Selectivity (SiO2:resist)'''--> 2.06 | ||
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! '''Etch rate in resist <br> (AZ5214E inverse)''' | ! '''Etch rate in resist <br> (AZ5214E inverse)''' | ||
! '''Selectivity <br> (SiO2:resist)''' | ! '''Selectivity <br> (SiO2:resist)''' | ||
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| Line 204: | Line 191: | ||
|<!--'''Etch rate in resist'''--> 57.3 nm/min <br> +/- 12.9% | |<!--'''Etch rate in resist'''--> 57.3 nm/min <br> +/- 12.9% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 1.22 | |<!--'''Selectivity (SiO2:resist)'''--> 1.22 | ||
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|<!--'''Etch rate in resist'''--> 24.2 nm/min <br> +/- 21.1% | |<!--'''Etch rate in resist'''--> 24.2 nm/min <br> +/- 21.1% | ||
|<!--'''Selectivity (SiO2:resist)'''--> 1.1 | |<!--'''Selectivity (SiO2:resist)'''--> 1.1 | ||
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Revision as of 12:13, 14 December 2023
Recipes and results - CHF3 tests
Tests performed with AZ5214E resist:
| Recipe | Recipe parameters | Process time | Date | SEM picture | Redeposition - top view | Profile angles | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
|---|---|---|---|---|---|---|---|---|---|
| CHF3_t1 | CHF3= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
12:00 min | 04/09/2023 | 
|
|
69.7 nm/min +/- 10.5% |
57.3 nm/min +/- 12.9% |
1.22 | |
| CHF3_t2 | CHF3= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
25:00 min | 04/09/2023 | 
|
|
|
26.7 nm/min +/- 11.9% |
24.2 nm/min +/- 21.1% |
1.1 |
| CHF3 t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
9,7 nm/min +/- 34.4% |
1,8 nm/min +/- 46.5% |
5.4 |
| CHF3_t1 | CHF3= 22.5 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 12/09/2023 | 
|
|
|
59,6 nm/min +/- 12.9% |
47,5 nm/min +/- 21.5% |
1.25 |
| CHF3_t1 | CHF3= 22.5 sccm O2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 11/09/2023 | 
|
|
|
60,6 nm/min +/- 10.1% |
130,8 nm/min +/- 8.8% |
0.46 |
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 20/09/2023 | 
|
|
|
47,3 nm/min +/- 12% |
26,4 nm/min +/- 17,4% |
1.8 |
| CHF3 t1 | CHF3= 22.5 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
36,5 nm/min +/- 10.6% |
17,5 nm/min +/- 13.9% |
2.09 |
| CHF3 t1 | CHF3= 35 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
42 nm/min +/- 15.4% |
23,8 nm/min +/- 22.2% |
1.76 |
| CHF3 t1 | CHF3= 22.5 sccm CF4= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
75,8 nm/min +/- 13.1% |
74,9 nm/min +/- 10.8% |
1.01 |
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 25mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
- | - | no etch done, polymer deposited |
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 0°C |
10:00 min | 22/09/2023 | 
|
|
|
48 nm/min +/- 11.2% |
23,3 nm/min +/- 13.7% |
2.06 |
Tests performed with 915nm UVN resist + 88nm BARC:
| Recipe | Recipe parameters | Process time | Date | SEM picture | Profile angles | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
|---|---|---|---|---|---|---|---|---|
| CHF3_t1 | CHF3= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
12:00 min | 04/09/2023 |
|
69.7 nm/min +/- 10.5% |
57.3 nm/min +/- 12.9% |
1.22 | |
| CHF3_t2 | CHF3= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
25:00 min | 04/09/2023 |
|
|
26.7 nm/min +/- 11.9% |
24.2 nm/min +/- 21.1% |
1.1 |