Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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===Recipes and results - <span style="background:#FFD850">CHF<sub>3</sub> tests=== | ===Recipes and results - <span style="background:#FFD850">CHF<sub>3</sub> tests=== | ||
Tests performed with AZ5214E resist: | |||
{| border="1" cellspacing="1" cellpadding="1" align="left" | {| border="1" cellspacing="1" cellpadding="1" align="left" | ||
! '''Recipe''' | ! '''Recipe''' | ||
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<br clear="all" /> | <br clear="all" /> | ||
Tests performed with 915nm UVN resist + 88nm BARC | Tests performed with 915nm UVN resist + 88nm BARC: | ||
{| border="1" cellspacing="1" cellpadding="1" align="left" | |||
! '''Recipe''' | |||
! '''Recipe parameters''' | |||
! '''Process time''' | |||
! '''Date''' | |||
! '''SEM picture''' | |||
! '''SEM pic w/ no resist''' | |||
! '''Redeposition - top view''' | |||
! '''Profile angles''' | |||
! '''Etch rate in SiO2''' | |||
! '''Etch rate in resist <br> (AZ5214E inverse)''' | |||
! '''Selectivity <br> (SiO2:resist)''' | |||
! '''Etch rate in Si''' | |||
|- | |||
|- | |||
|-style="background:white; color:black" | |||
|<!-- '''Recipe name''' --> CHF3_t1 | |||
|<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= '''22.5''' sccm <br> Coil= 800W <br> Platen= 15W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |||
|<!--'''Process time'''--> 12:00 min | |||
|<!--'''Date'''--> 04/09/2023 | |||
|<!--'''SEM picture'''--> [[File:CHF3 t1 pat C 01.png|200px]] | |||
|<!--'''SEM pic w/ no resist'''--> | |||
|<!--'''Redeposition - top view'''--> [[File:CHF3 t1 12min af PA 03.png|200px]] | |||
|<!--'''Profile angles'''--> | |||
|<!--'''Etch rate in SiO2'''--> 69.7 nm/min <br> +/- 10.5% | |||
|<!--'''Etch rate in resist'''--> 57.3 nm/min <br> +/- 12.9% | |||
|<!--'''Selectivity (SiO2:resist)'''--> 1.22 | |||
|<!--'''Etch rate in Si'''--> | |||
|- | |||
|- | |||
|-style="background:white; color:black" | |||
|<!-- '''Recipe name''' --> '''CHF3_t2''' | |||
|<!-- '''SiO2 before etch''' --> CHF<sub>3</sub>= 22.5 sccm <br> Coil= '''150W''' <br> Platen= '''25W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |||
|<!--'''Process time'''--> 25:00 min | |||
|<!--'''Date'''--> 04/09/2023 | |||
|<!--'''SEM picture'''--> [[File:CHF3 t2 pat C 05.png|200px]] | |||
|<!--'''SEM pic w/ no resist'''--> | |||
|<!--'''Redeposition - top view'''--> [[File:CHF3 t2 25min af PA 05.png|200px]] | |||
|<!--'''Profile angles'''--> [[File:CHF3 t2 pat C 03.png|200px]] | |||
|<!--'''Etch rate in SiO2'''--> 26.7 nm/min <br> +/- 11.9% | |||
|<!--'''Etch rate in resist'''--> 24.2 nm/min <br> +/- 21.1% | |||
|<!--'''Selectivity (SiO2:resist)'''--> 1.1 | |||
|<!--'''Etch rate in Si'''--> | |||
|- | |||
|- |
Revision as of 12:09, 14 December 2023
Recipes and results - CHF3 tests
Tests performed with AZ5214E resist:
Tests performed with 915nm UVN resist + 88nm BARC: