Specific Process Knowledge/Lithography/UVExposure Dose: Difference between revisions
Redirected page to Specific Process Knowledge/Lithography/Resist#Exposure dose Tag: New redirect |
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#REDIRECT [[Specific Process Knowledge/Lithography/Resist#Exposure_dose]] | |||
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It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | ||
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==Comparison: Relative exposure dose== | ==Comparison: Relative exposure dose== | ||
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<sup>1)</sup> Due to a difference in the sensitivity of the power meter used in calibration. | <sup>1)</sup> Due to a difference in the sensitivity of the power meter used in calibration. | ||
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'''AZ 5214E image reversal''' | '''AZ 5214E image reversal''' | ||
*1.5 µm resist on boron glass: around 49 mJ/cm<sup>2</sup> (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech). | *1.5 µm resist on boron glass: around 49 mJ/cm<sup>2</sup> (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech). | ||
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