Specific Process Knowledge/Lithography/UVExposure Dose: Difference between revisions
Redirected page to Specific Process Knowledge/Lithography/Resist#Exposure dose Tag: New redirect |
|||
| (5 intermediate revisions by the same user not shown) | |||
| Line 1: | Line 1: | ||
#REDIRECT [[Specific Process Knowledge/Lithography/Resist#Exposure_dose]] | |||
<!-- | |||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure_Dose click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure_Dose click here]''' | ||
=Exposure dose= | =Exposure dose= | ||
[[Image:AZ spectral sensitivity. | [[Image:AZ photoresists spectral sensitivity - remake v1.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption.]] | ||
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction that makes the resist develop in the developer. In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist insoluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose. | During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction that makes the resist develop in the developer. In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist insoluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose. | ||
| Line 119: | Line 123: | ||
It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | ||
SECTION HIDDEN BY TARAN 20-03-2020 | |||
==Comparison: Relative exposure dose== | ==Comparison: Relative exposure dose== | ||
| Line 170: | Line 174: | ||
<sup>1)</sup> Due to a difference in the sensitivity of the power meter used in calibration. | <sup>1)</sup> Due to a difference in the sensitivity of the power meter used in calibration. | ||
<br clear="all" /> | <br clear="all" /> | ||
| Line 329: | Line 331: | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! | !AZ 5214E<br><span style="color:green">New Japanese version</span> | ||
| | |2023-01-11<br>jehem | ||
|1.5 µm | |1.5 µm | ||
| | |70 mJ/cm<sup>2</sup> | ||
|Single puddle, 60 s | |Single puddle, 60 s | ||
| | |||
|- | |- | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! | !AZ 5214E Image Reversal<br><span style="color:green">New Japanese version</span> | ||
| | |2023-01-11<br>jehem | ||
| | |2.2 µm | ||
|22 mJ/cm<sup>2</sup> | |22 mJ/cm<sup>2</sup> | ||
|Single puddle, 60 s | |Single puddle, 60 s | ||
|Image reversal process.<br>Reversal bake: 60s at 110°C.<br>Flood exposure: 500 mJ/cm<sup>2</sup> | |||
|- | |- | ||
| Line 464: | Line 456: | ||
'''AZ 5214E image reversal''' | '''AZ 5214E image reversal''' | ||
*1.5 µm resist on boron glass: around 49 mJ/cm<sup>2</sup> (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech). | *1.5 µm resist on boron glass: around 49 mJ/cm<sup>2</sup> (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech). | ||
--> | |||