Specific Process Knowledge/Lithography/UVExposure Dose: Difference between revisions
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#REDIRECT [[Specific Process Knowledge/Lithography/Resist#Exposure_dose]] | |||
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure_Dose click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure_Dose click here]''' | ||
=Exposure dose= | =Exposure dose= | ||
[[Image:AZ spectral sensitivity. | [[Image:AZ photoresists spectral sensitivity - remake v1.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption.]] | ||
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction that makes the resist develop in the developer. In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist insoluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose. | During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction that makes the resist develop in the developer. In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist insoluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose. | ||
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It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | ||
SECTION HIDDEN BY TARAN 20-03-2020 | |||
==Comparison: Relative exposure dose== | ==Comparison: Relative exposure dose== | ||
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<sup>1)</sup> Due to a difference in the sensitivity of the power meter used in calibration. | <sup>1)</sup> Due to a difference in the sensitivity of the power meter used in calibration. | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!rowspan="2"|AZ 5214E | !rowspan="2"|AZ 5214E<br><span style="color:red">Old German version</span> | ||
|Long ago | |Long ago | ||
|1.5 µm | |1.5 µm | ||
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|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!rowspan="2"|AZ 5214E Image Reversal | !rowspan="2"|AZ 5214E Image Reversal<br><span style="color:red">Old German version</span> | ||
|Long ago | |Long ago | ||
|1.5 µm | |1.5 µm | ||
|22 | |22 mJ/cm<sup>2</sup> | ||
|Single puddle, 60 s | |Single puddle, 60 s | ||
|rowspan="2"|Image reversal process.<br>Reversal bake: 120s at 110°C.<br>Flood exposure: 200 mJ/cm<sup>2</sup> | |rowspan="2"|Image reversal process.<br>Reversal bake: 120s at 110°C.<br>Flood exposure: 200 mJ/cm<sup>2</sup> | ||
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|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!AZ | !rowspan="3"|AZ MiR 701<br><span style="color:red">Old PFOA containing version</span> | ||
|Long ago | |Long ago | ||
|1.5 µm | |1.5 µm | ||
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|Single puddle, 60 s | |Single puddle, 60 s | ||
|rowspan="2"|PEB: 60 s at 110°C | |rowspan="2"|PEB: 60 s at 110°C | ||
|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
|Long ago | |Long ago | ||
|2 µm | |2 µm | ||
|~200 mJ/cm<sup>2</sup> | |~200 mJ/cm<sup>2</sup> | ||
|Single puddle, 60 s | |Single puddle, 60 s | ||
|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
|Long ago | |Long ago | ||
|4 µm | |4 µm | ||
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|- | |- | ||
|-style="background: | |-style="background:LightGrey; color:black" | ||
!AZ nLOF 2020 | !AZ nLOF 2020 | ||
|Long ago | |Long ago | ||
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|PEB: 60 s at 110°C<br>Use 60 s development for lift-off | |PEB: 60 s at 110°C<br>Use 60 s development for lift-off | ||
|- | |- | ||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!AZ 5214E<br><span style="color:green">New Japanese version</span> | |||
|2023-01-11<br>jehem | |||
|1.5 µm | |||
|70 mJ/cm<sup>2</sup> | |||
|Single puddle, 60 s | |||
| | |||
|- | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!AZ 5214E Image Reversal<br><span style="color:green">New Japanese version</span> | |||
|2023-01-11<br>jehem | |||
|2.2 µm | |||
|22 mJ/cm<sup>2</sup> | |||
|Single puddle, 60 s | |||
|Image reversal process.<br>Reversal bake: 60s at 110°C.<br>Flood exposure: 500 mJ/cm<sup>2</sup> | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!AZ 4562<br><span style="color:green">New Japanese version</span> | |||
|2021-12-08<br>jehem | |||
|10 µm | |||
|550 mJ/cm<sup>2</sup> | |||
|Multiple puddles, 5 x 60 s | |||
|Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary) | |||
|- | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!AZ MiR 701<br><span style="color:green">New PFOA free version</span> | |||
|2021-06-23<br>elkh | |||
|1.5 µm | |||
|~150 mJ/cm<sup>2</sup> | |||
|Single puddle, 60 s | |||
|PEB: 60 s at 110°C | |||
|- | |||
|} | |} | ||
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'''AZ 5214E image reversal''' | '''AZ 5214E image reversal''' | ||
*1.5 µm resist on boron glass: around 49 mJ/cm<sup>2</sup> (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech). | *1.5 µm resist on boron glass: around 49 mJ/cm<sup>2</sup> (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech). | ||
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