Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch: Difference between revisions
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|<!--'''Process time'''--> 08:00 min | |<!--'''Process time'''--> 08:00 min | ||
|<!--'''Date'''--> March 2023 | |<!--'''Date'''--> March 2023 | ||
|<!--'''SEM picture'''--> [[File:35. | |<!--'''SEM picture'''--> [[File:200px-35.10_af_ase_04.png|200px]] | ||
|<!--'''SEM pic w/ no resist'''--> [[File:35. | |<!--'''SEM pic w/ no resist'''--> [[File:200px-35.10_af_PA_bot_03.png|200px]] | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Profile angles'''--> | |<!--'''Profile angles'''--> | ||
|<!--'''Etch rate in SiO2'''--> 69 nm/min <br> +/- 11.1% | |<!--'''Etch rate in SiO2'''--> 69 nm/min <br> +/- 11.1% | ||
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|<!--'''Process time'''--> 08:00 min | |<!--'''Process time'''--> 08:00 min | ||
|<!--'''Date'''--> March 2023 | |<!--'''Date'''--> March 2023 | ||
|<!--'''SEM picture'''--> [[File: | |<!--'''SEM picture'''--> [[File:200px-CF4ICP_45.0c_bf_PA_04.png|200px]] | ||
|<!--'''SEM pic w/ no resist'''--> [[File: | |<!--'''SEM pic w/ no resist'''--> [[File:200px-CF4ICP_45.0c_af_Pa-bot_06.png|200px]] | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||
trench opening as a fraction of pitch--> | trench opening as a fraction of pitch--> | ||
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|<!--'''Process time'''--> 08:00 min | |<!--'''Process time'''--> 08:00 min | ||
|<!--'''Date'''--> March 2023 | |<!--'''Date'''--> March 2023 | ||
|<!--'''SEM picture'''--> [[File:45. | |<!--'''SEM picture'''--> [[File:200px-45.10_af_ASE_01.png|200px]] | ||
|<!--'''SEM pic w/ no resist'''--> [[File:45. | |<!--'''SEM pic w/ no resist'''--> [[File:200px-45.10_af_PA_center_07.png|200px]] | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||
trench opening as a fraction of pitch--> | trench opening as a fraction of pitch--> | ||
Revision as of 13:59, 3 October 2023
More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch
Tests performed by Maria Farinha @DTU Nanolab
Recipes and results - CF4 / H2 tests
| Recipe | Recipe parameters | Process time | Date | SEM picture | SEM pic w/ no resist | Redeposition - top view | Profile angles | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
Etch rate in Si |
|---|---|---|---|---|---|---|---|---|---|---|---|
| CF4ICP 22.5/22.5 | CF4= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
11:00 min | 11/09/2023 | 
|
|
|
68 nm/min +/- 8.5% |
60,2 nm/min +/- 9% |
1.13 | ||
| CF4ICP 35/10 | CF4= 35 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
08:00 min | March 2023 | 
|
|
69 nm/min +/- 11.1% |
77,1 nm/min +/- 9.4% |
0.9 | |||
| CF4ICP 45/0 | CF4= 45 sccm H2= 0 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
08:00 min | March 2023 | 
|
|
71.4 nm/min +/- 10.3% |
96,5 nm/min +/- 6.0% |
0.74 | |||
| CF4ICP 45/10 | CF4= 45 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
08:00 min | March 2023 | 
|
|
67.8 nm/min +/- 14.9% |
88,86 nm/min +/- 4.8% |
0.76 | |||
| CF4lowCP 22.5/22.5 | CF4= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
20:00 min | Sept 2023 | 
|
|
23.8 nm/min +/- 11% |
20,6 nm/min +/- 19.4% |
1.16 | |||
| CF4lowCP 35/10 | CF4= 35 sccm H2= 10 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 min | Feb 2023 | 
|
|
22.65 nm/min +/- 10.2% |
35.9 nm/min +/- 10.1% |
0.63 | |||
| CF4lowCP 45/0 | CF4= 45 sccm H2= 0 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 min | Feb 2023 | 
|
|
24.9 nm/min +/- 10.1% |
52,3 nm/min +/- 7.1% |
0.47 | |||
| CF4lowCP 45/10 | CF4= 45 sccm H2= 10 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 min | Feb 2023 | 
|
X | 29,4 nm/min +/- 13.7% |
100,6 nm/min +/- 16.5% |
0.29 |
Recipes and results - CHF3 tests
| Recipe | Recipe parameters | Process time | Date | SEM picture | SEM pic w/ no resist | Redeposition - top view | Profile angles | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
Etch rate in Si |
|---|---|---|---|---|---|---|---|---|---|---|---|
| CHF3_t1 | CHF3= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
12:00 min | 04/09/2023 | 
|
|
69.7 nm/min +/- 10.5% |
57.3 nm/min +/- 12.9% |
1.22 | |||
| CHF3_t2 | CHF3= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
25:00 min | 04/09/2023 | 
|
|
|
26.7 nm/min +/- 11.9% |
24.2 nm/min +/- 21.1% |
1.1 | ||
| CHF3 t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
9,7 nm/min +/- 34.4% |
1,8 nm/min +/- 46.5% |
5.4 | ||
| CHF3_t1 | CHF3= 22.5 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 12/09/2023 | 
|
|
|
59,6 nm/min +/- 12.9% |
47,5 nm/min +/- 21.5% |
1.25 | ||
| CHF3_t1 | CHF3= 22.5 sccm O2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 11/09/2023 | 
|
|
|
60,6 nm/min +/- 10.1% |
130,8 nm/min +/- 8.8% |
0.46 | ||
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 20/09/2023 | 
|
|
|
47,3 nm/min +/- 12% |
26,4 nm/min +/- 17,4% |
1.8 | ||
| CHF3 t1 | CHF3= 22.5 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
36,5 nm/min +/- 10.6% |
17,5 nm/min +/- 13.9% |
2.09 | ||
| CHF3 t1 | CHF3= 35 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
42 nm/min +/- 15.4% |
23,8 nm/min +/- 22.2% |
1.76 | ||
| CHF3 t1 | CHF3= 22.5 sccm CF4= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
75,8 nm/min +/- 13.1% |
74,9 nm/min +/- 10.8% |
1.01 | ||
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 25mTorr Temp= 20°C |
10:00 min | 22/09/2023 | 
|
|
|
- | - | no etch done, polymer deposited |
||
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 0°C |
10:00 min | 22/09/2023 | 
|
|
|
48 nm/min +/- 11.2% |
23,3 nm/min +/- 13.7% |
2.06 |
Recipes and results - C4F8 / H2 tests
| Recipe | Recipe parameters | Process time | Date | SEM picture | SEM pic w/ no resist | Redeposition - top view | Profile angles | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
Etch rate in Si |
|---|---|---|---|---|---|---|---|---|---|---|---|
| SiO2_ICP | C4F8= 10 sccm H2= 28 sccm Coil= 1000W Platen= 100W Press= 2.5mTorr Temp= 20°C |
04:00 min | 04/09/2023 | 
|
|
|
211,9 nm/min +/- 14.6% |
153,4 nm/min +/- 16.7% |
1.4 | ||
| SiO2_ICP | C4F8= 10 sccm H2= 28 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
04:00 min | 22/09/2023 | 
|
|
|
134,7 nm/min +/- 20.8% |
145,7 nm/min +/- 25.1% |
0.92 |