Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/EM with resist mask: Difference between revisions
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(Created page with "==Looking at bit on the effect of using electromagnets for etching SiO2 with DUV resist== {{}}") |
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==Looking at bit on the effect of using electromagnets for etching SiO2 with DUV resist== | ==Looking at bit on the effect of using electromagnets for etching SiO2 with DUV resist== | ||
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*Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A | |||
<gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5"> | |||
File:C09975_00.jpg | |||
File:C09975_02.jpg | |||
File:C09975_03.jpg | |||
File:C09975_04.jpg | |||
File:C09975_05.jpg | |||
</gallery> | |||
Latest revision as of 12:48, 11 September 2023
Looking at bit on the effect of using electromagnets for etching SiO2 with DUV resist
Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
- Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A
- Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min
