Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/EM with resist mask: Difference between revisions
< Specific Process Knowledge | Etch | DRIE-Pegasus | Pegasus-4 | SiO2 Etch
Jump to navigation
Jump to search
Line 2: | Line 2: | ||
{{CC-bghe2}} | {{CC-bghe2}} | ||
*Removing the H2 from the recipe to get less redeposition @ 200W platen power | *Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A | ||
<gallery> | <gallery> |