Specific Process Knowledge/Thin film deposition/PECVD/Doping: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping  click here]'''  


=<span style="color:#FF0000">This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar</span>=


==Boron-doping by use of BSG glass deposited in PECVD2==


''Results from Joachim Dahl Thomsen, Nanotech, 2014''


=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
===Recipe===
{| border="1" cellspacing="0" cellpadding="7" width="800" style="text-align:center;"
|-
|Recipe name
|SiH<sub>4</sub> flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N2 flow [sccm]
|B<sub>2</sub>H<sub>6</sub> flow [sccm]
|PH<sub>3</sub> flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|1PBSG
|17
|1600
|0
|120, 130, 140, 160, 240
|0
|400
|380
|BSG glass for driving in boron in Silicon
|}


==Boron-doping by use of BSG glass deposited in PECVD==
5 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in 440 nm Oxide.
The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF.
 
The wafers were then analyzed by SIMS and the results are shown in the figure below:
 
 
[[image:SIMS2.png|627x424px|left|thumb|Boron concentration measured by SIMS. Results from Joachim Dahl Thomsen, Nanotech, 2014.]]
 
<br clear="all" />
 
==Boron-doping by use of BSG glass deposited in PECVD2==
 
''Results from Trine Holm Christensen, Space, Feb. 2015''


===Recipe===
===Recipe===
{| border="1" cellspacing="0" cellpadding="7"
{| border="1" cellspacing="0" cellpadding="7" width="800" style="text-align:center;"
|-
|-
|Recipe name  
|Recipe name  
|SiH4 flow [sccm]
|SiH<sub>4</sub> flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N2 flow [sccm]
|N2 flow [sccm]
|B2H6 flow [sccm]
|B<sub>2</sub>H<sub>6</sub> flow [sccm]
|PH3 flow [sccm]
|PH<sub>3</sub> flow [sccm]
|Pressure [mTorr]
|Pressure [mTorr]
|Power [W]
|Power [W]
Line 25: Line 62:
|1600
|1600
|0
|0
|120, 130, 140, 160, 240
|120, 130, 140
|0
|0
|400
|400
|380
|380
|BPSG glass for drive in boron in Silicon  
|BSG glass for driving in boron in Silicon
|}
|}


5 tests were made where only the B2H6 flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min (resulting in 440 nm Oxide).  
3 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in approximately 400nm Oxide.
The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF. The wafers were then analysed by SIMS and the results are shown in the figure below:


The wafers were going through several annealing and oxidation step:


[[image:SIMS2.png|627x424px|left|thumb|Boron concentration measured by SIMS. Results from Joachim Dahl Thomsen, Nanotech, 2014.]]
'''The total thermal budget for the wafers:'''
 
'''Anneal in Furnace (C1):''' ANN1000, 30 min in N<sub>2</sub>, strip of oxide in a 25 min BHF etch.
 
'''Wet oxidation in Furnace (C1):''' WET1050, 30 min, no further anneal
 
'''Anneal in Furnace (C1):''' ANN950, 60 min in N<sub>2</sub>
 
The wafers were then analyzed by SIMS and the results are shown in the figure below:
 
[[image:PECVD_Boron_doping_profiles.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.]]
<br clear="all" />
 
Measured peak concentrations and sheet resistances:
<br>
{| border="1" cellspacing="0" cellpadding="7" with="50" style="text-align:center;"
|-
|Wafer
|Peak Concentration
[atoms/cm<sup>3</sup>]
|Sheet Resistance
[&Omega;/sq]
|-
|BSG120
|1.75*10<sup>19</sup>
|56.4
|-
|BSG130
|2.44*10<sup>19</sup>
|36.2
|-
|BSG140
|2.36*10<sup>19</sup>
|40.3
|-
|}


<br clear="all" />
<br clear="all" />

Latest revision as of 15:08, 7 August 2023

Feedback to this page: click here

This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar

Boron-doping by use of BSG glass deposited in PECVD2

Results from Joachim Dahl Thomsen, Nanotech, 2014

Recipe

Recipe name SiH4 flow [sccm] N2O flow [sccm] N2 flow [sccm] B2H6 flow [sccm] PH3 flow [sccm] Pressure [mTorr] Power [W] Description
1PBSG 17 1600 0 120, 130, 140, 160, 240 0 400 380 BSG glass for driving in boron in Silicon

5 tests were made where only the B2H6 flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in 440 nm Oxide. The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF.

The wafers were then analyzed by SIMS and the results are shown in the figure below:


Boron concentration measured by SIMS. Results from Joachim Dahl Thomsen, Nanotech, 2014.


Boron-doping by use of BSG glass deposited in PECVD2

Results from Trine Holm Christensen, Space, Feb. 2015

Recipe

Recipe name SiH4 flow [sccm] N2O flow [sccm] N2 flow [sccm] B2H6 flow [sccm] PH3 flow [sccm] Pressure [mTorr] Power [W] Description
1PBSG 17 1600 0 120, 130, 140 0 400 380 BSG glass for driving in boron in Silicon

3 tests were made where only the B2H6 flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in approximately 400nm Oxide.

The wafers were going through several annealing and oxidation step:

The total thermal budget for the wafers:

Anneal in Furnace (C1): ANN1000, 30 min in N2, strip of oxide in a 25 min BHF etch.

Wet oxidation in Furnace (C1): WET1050, 30 min, no further anneal

Anneal in Furnace (C1): ANN950, 60 min in N2

The wafers were then analyzed by SIMS and the results are shown in the figure below:

Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.


Measured peak concentrations and sheet resistances:

Wafer Peak Concentration

[atoms/cm3]

Sheet Resistance

[Ω/sq]

BSG120 1.75*1019 56.4
BSG130 2.44*1019 36.2
BSG140 2.36*1019 40.3


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