Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions
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====Results | ====Results with a ''non-patterned wafer''==== | ||
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====Results | ====Results with a ''patterned wafer'' ==== | ||
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Latest revision as of 15:25, 18 July 2023
Unless otherwise stated, all content in this section was done by Maria Farinha@DTU Nanolab, May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
Parameter | Recipe name: SiO2_ICP |
---|---|
Coil Power [W] | 1000 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
C4F8 flow [sccm] | 10 |
H2 flow [sccm] | 28 |
Pressure [mTorr] | 2.5 |
Results with a non-patterned wafer
Recipe | Recipe: SIO2_ICP | SIO2_ICP on stoic Nit | SIO2_ICP on low-stress Nit |
---|---|---|---|
Etch rate | 121 nm/min
(18.07.2023 mfarin @ DTU nanolab) |
194 nm/min
(24.05.2023 mfarin @ DTU nanolab) |
190 nm/min
(24.05.2023 mfarin @ DTU nanolab) |
Results with a patterned wafer
- More tests will be done regarding silicon and silicon nitride, since this recipe can be used for overetch.