Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions
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====Results | ====Results with a ''non-patterned wafer''==== | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
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! | !Recipe | ||
!Recipe: SIO2_ICP | !Recipe: SIO2_ICP | ||
!SIO2_ICP on stoic Nit | !SIO2_ICP on stoic Nit | ||
!SIO2_ICP on low-stress Nit | !SIO2_ICP on low-stress Nit | ||
|- | |- | ||
|Etch rate | |Etch rate | ||
| | |121 nm/min | ||
( | (18.07.2023 mfarin @ DTU nanolab) | ||
|194 nm/min | |194 nm/min | ||
( | (24.05.2023 mfarin @ DTU nanolab) | ||
|190 nm/min | |190 nm/min | ||
( | (24.05.2023 mfarin @ DTU nanolab) | ||
|- | |- | ||
|} | |} | ||
====Results | ====Results with a ''patterned wafer'' ==== | ||
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|155 nm/min in the center, 125nm/min in the edges | |155 nm/min in the center, 125nm/min in the edges | ||
(03052023 mfarin @ DTU nanolab) | (03052023 mfarin @ DTU nanolab) | ||
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Latest revision as of 15:25, 18 July 2023
Unless otherwise stated, all content in this section was done by Maria Farinha@DTU Nanolab, May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
| Parameter | Recipe name: SiO2_ICP |
|---|---|
| Coil Power [W] | 1000 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 20 |
| C4F8 flow [sccm] | 10 |
| H2 flow [sccm] | 28 |
| Pressure [mTorr] | 2.5 |
Results with a non-patterned wafer
| Recipe | Recipe: SIO2_ICP | SIO2_ICP on stoic Nit | SIO2_ICP on low-stress Nit |
|---|---|---|---|
| Etch rate | 121 nm/min
(18.07.2023 mfarin @ DTU nanolab) |
194 nm/min
(24.05.2023 mfarin @ DTU nanolab) |
190 nm/min
(24.05.2023 mfarin @ DTU nanolab) |
Results with a patterned wafer
| Material to be etched | Recipe: SIO2_ICP | SIO2_ICP on stoic Nit | SIO2_ICP on low-stress Nit | SIO2_ICP on Si |
|---|---|---|---|---|
| Etch rate in SiO2 | 155 nm/min in the center, 125nm/min in the edges
(03052023 mfarin @ DTU nanolab) |
|||
| Etch rate in resist (AZ 5214E) | 108 nm/min in the center, 98nm/min in the edges
(03052023 mfarin @ DTU nanolab) |
|||
| Selectivity (SiO2:resist) | 1.45 | |||
| Etch rate in silicon | ||||
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- More tests will be done regarding silicon and silicon nitride, since this recipe can be used for overetch.