Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions
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''' ''Unless otherwise stated, all content in this section was done by Maria Farinha@DTU Nanolab, May 2023'' ''' | |||
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature. | This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature. | ||
{| border="1" cellspacing="2" cellpadding="2" | {| border="1" cellspacing="2" cellpadding="2" | ||
Line 8: | Line 9: | ||
|- | |- | ||
|Coil Power [W] | |Coil Power [W] | ||
| | |1000 | ||
|- | |- | ||
|Platen Power [W] | |Platen Power [W] | ||
| | |200 | ||
|- | |- | ||
|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
Line 17: | Line 18: | ||
|- | |- | ||
|C<sub>4</sub>F<sub>8</sub> flow [sccm] | |C<sub>4</sub>F<sub>8</sub> flow [sccm] | ||
| | |10 | ||
|- | |- | ||
|H<sub>2</sub> flow [sccm] | |H<sub>2</sub> flow [sccm] | ||
| | |28 | ||
|- | |- | ||
|Pressure [mTorr] | |Pressure [mTorr] | ||
Line 30: | Line 28: | ||
|} | |} | ||
====Results | ====Results with a ''non-patterned wafer''==== | ||
{| border="2" cellspacing="2" cellpadding="3" | |||
|-style="background:DarkGray; color:White" | |||
!Recipe | |||
!Recipe: SIO2_ICP | |||
!SIO2_ICP on stoic Nit | |||
!SIO2_ICP on low-stress Nit | |||
|- | |||
|Etch rate | |||
|121 nm/min | |||
(18.07.2023 mfarin @ DTU nanolab) | |||
|194 nm/min | |||
(24.05.2023 mfarin @ DTU nanolab) | |||
|190 nm/min | |||
(24.05.2023 mfarin @ DTU nanolab) | |||
|- | |||
|} | |||
====Results with a ''patterned wafer'' ==== | |||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
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!Material to be etched | !Material to be etched | ||
!Recipe: SIO2_ICP | !Recipe: SIO2_ICP | ||
! | !SIO2_ICP on stoic Nit | ||
!SIO2_ICP on low-stress Nit | |||
!SIO2_ICP on Si | |||
|- | |- | ||
|Etch rate in SiO2 | |Etch rate in SiO2 | ||
| | |155 nm/min in the center, 125nm/min in the edges | ||
| | (03052023 mfarin @ DTU nanolab) | ||
| | |||
| | |||
| | |||
|- | |- | ||
|Etch rate in | |Etch rate in resist (AZ 5214E) | ||
|108 nm/min in the center, 98nm/min in the edges | |||
(03052023 mfarin @ DTU nanolab) | |||
| | | | ||
| | |||
| | |||
| | |||
| | |||
| | |||
|- | |- | ||
|Selectivity (SiO2:resist) | |Selectivity (SiO2:resist) | ||
|1. | |1.45 | ||
| | | | ||
| | |||
| | |||
|- | |- | ||
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|- | |- | ||
|Profile Images | |Profile Images | ||
|[[File:SiO2_ICP.2-top-02.png|300px]] | |||
[[File:SiO2_ICP.2-top-04.png|300px]] | |||
| | |||
| | | | ||
| | | | ||
|- | |- | ||
|} | |} | ||
*More tests will be done regarding silicon and silicon nitride, since this recipe can be used for overetch. | |||
<br clear="all" /> | <br clear="all" /> |
Latest revision as of 15:25, 18 July 2023
Unless otherwise stated, all content in this section was done by Maria Farinha@DTU Nanolab, May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
Parameter | Recipe name: SiO2_ICP |
---|---|
Coil Power [W] | 1000 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
C4F8 flow [sccm] | 10 |
H2 flow [sccm] | 28 |
Pressure [mTorr] | 2.5 |
Results with a non-patterned wafer
Recipe | Recipe: SIO2_ICP | SIO2_ICP on stoic Nit | SIO2_ICP on low-stress Nit |
---|---|---|---|
Etch rate | 121 nm/min
(18.07.2023 mfarin @ DTU nanolab) |
194 nm/min
(24.05.2023 mfarin @ DTU nanolab) |
190 nm/min
(24.05.2023 mfarin @ DTU nanolab) |
Results with a patterned wafer
- More tests will be done regarding silicon and silicon nitride, since this recipe can be used for overetch.