Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
|||
(47 intermediate revisions by the same user not shown) | |||
Line 1: | Line 1: | ||
''' ''Unless otherwise stated, all content in this section was done by Maria Farinha@DTU Nanolab, May 2023'' ''' | |||
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature. | This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature. | ||
{| border="1" cellspacing="2" cellpadding="2" | |||
|-style="background:Black; color:White" | |||
! Parameter | |||
|Recipe name: '''SiO2_ICP''' | |||
|- | |||
|Coil Power [W] | |||
|1000 | |||
|- | |||
|Platen Power [W] | |||
|200 | |||
|- | |||
|Platen temperature [<sup>o</sup>C] | |||
|20 | |||
|- | |||
|C<sub>4</sub>F<sub>8</sub> flow [sccm] | |||
|10 | |||
|- | |||
|H<sub>2</sub> flow [sccm] | |||
|28 | |||
|- | |||
|Pressure [mTorr] | |||
|2.5 | |||
|- | |||
|} | |||
====Results with a ''non-patterned wafer''==== | |||
{| border="2" cellspacing="2" cellpadding="3" | |||
|-style="background:DarkGray; color:White" | |||
!Recipe | |||
!Recipe: SIO2_ICP | |||
!SIO2_ICP on stoic Nit | |||
!SIO2_ICP on low-stress Nit | |||
|- | |||
|Etch rate | |||
|121 nm/min | |||
(18.07.2023 mfarin @ DTU nanolab) | |||
|194 nm/min | |||
(24.05.2023 mfarin @ DTU nanolab) | |||
|190 nm/min | |||
(24.05.2023 mfarin @ DTU nanolab) | |||
|- | |||
|} | |||
====Results with a ''patterned wafer'' ==== | |||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
Line 5: | Line 55: | ||
!Material to be etched | !Material to be etched | ||
!Recipe: SIO2_ICP | !Recipe: SIO2_ICP | ||
! | !SIO2_ICP on stoic Nit | ||
!SIO2_ICP on low-stress Nit | |||
!SIO2_ICP on Si | |||
|- | |- | ||
|Etch rate in SiO2 | |Etch rate in SiO2 | ||
| | |155 nm/min in the center, 125nm/min in the edges | ||
| | (03052023 mfarin @ DTU nanolab) | ||
| | |||
| | |||
| | |||
|- | |- | ||
|Etch rate in | |Etch rate in resist (AZ 5214E) | ||
|108 nm/min in the center, 98nm/min in the edges | |||
(03052023 mfarin @ DTU nanolab) | |||
| | | | ||
| | |||
| | |||
| | |||
| | |||
| | |||
|- | |- | ||
|Selectivity (SiO2:resist) | |Selectivity (SiO2:resist) | ||
|1. | |1.45 | ||
| | | | ||
| | |||
| | |||
|- | |- | ||
Line 31: | Line 83: | ||
| | | | ||
| | | | ||
| | |||
| | | | ||
|- | |- | ||
|Profile Images | |Profile Images | ||
|[[File: | |[[File:SiO2_ICP.2-top-02.png|300px]] | ||
| | [[File:SiO2_ICP.2-top-04.png|300px]] | ||
| | | | ||
| | |||
| | |||
|- | |- | ||
|} | |} | ||
*More tests will be done regarding silicon and silicon nitride, since this recipe can be used for overetch. | |||
<br clear="all" /> | <br clear="all" /> |
Latest revision as of 15:25, 18 July 2023
Unless otherwise stated, all content in this section was done by Maria Farinha@DTU Nanolab, May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
Parameter | Recipe name: SiO2_ICP |
---|---|
Coil Power [W] | 1000 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
C4F8 flow [sccm] | 10 |
H2 flow [sccm] | 28 |
Pressure [mTorr] | 2.5 |
Results with a non-patterned wafer
Recipe | Recipe: SIO2_ICP | SIO2_ICP on stoic Nit | SIO2_ICP on low-stress Nit |
---|---|---|---|
Etch rate | 121 nm/min
(18.07.2023 mfarin @ DTU nanolab) |
194 nm/min
(24.05.2023 mfarin @ DTU nanolab) |
190 nm/min
(24.05.2023 mfarin @ DTU nanolab) |
Results with a patterned wafer
- More tests will be done regarding silicon and silicon nitride, since this recipe can be used for overetch.