Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions
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|Pressure [mTorr] | |Pressure [mTorr] | ||
|2.5 | |2.5 | ||
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====Results when etching a patterned wafer ==== | |||
{| border="2" cellspacing="2" cellpadding="3" | |||
|-style="background:DarkGray; color:White" | |||
!Material to be etched | |||
!Recipe: SIO2_ICP | |||
!SIO2_ICP on stoic Nit | |||
!SIO2_ICP on low-stress Nit | |||
!SIO2_ICP on Si | |||
|- | |||
|Etch rate in SiO2 | |||
|155 nm/min in the center, 125nm/min in the edges | |||
(03052023 mfarin @ DTU nanolab) | |||
|194 nm/min | |||
(24052023 mfarin @ DTU nanolab) | |||
|190 nm/min | |||
(24052023 mfarin @ DTU nanolab) | |||
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|Etch rate in resist (AZ 5214E) | |||
|108 nm/min in the center, 98nm/min in the edges | |||
(03052023 mfarin @ DTU nanolab) | |||
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|Selectivity (SiO2:resist) | |||
|1.45 | |||
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|Etch rate in silicon | |||
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|Profile Images | |||
|[[File:SiO2_ICP.2-top-02.png|300px]] | |||
[[File:SiO2_ICP.2-top-04.png|300px]] | |||
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Revision as of 14:54, 18 July 2023
Unless otherwise stated, all content in this section was done by Maria Farinha@DTU Nanolab, May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
| Parameter | Recipe name: SiO2_ICP |
|---|---|
| Coil Power [W] | 1000 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 20 |
| C4F8 flow [sccm] | 10 |
| H2 flow [sccm] | 28 |
| Pressure [mTorr] | 2.5 |
Results when etching a patterned wafer
| Material to be etched | Recipe: SIO2_ICP | SIO2_ICP on stoic Nit | SIO2_ICP on low-stress Nit | SIO2_ICP on Si |
|---|---|---|---|---|
| Etch rate in SiO2 | 155 nm/min in the center, 125nm/min in the edges
(03052023 mfarin @ DTU nanolab) |
194 nm/min
(24052023 mfarin @ DTU nanolab) |
190 nm/min
(24052023 mfarin @ DTU nanolab) |
|
| Etch rate in resist (AZ 5214E) | 108 nm/min in the center, 98nm/min in the edges
(03052023 mfarin @ DTU nanolab) |
|||
| Selectivity (SiO2:resist) | 1.45 | |||
| Etch rate in silicon | ||||
| Profile Images | 
|
Results when etching a patterned wafer
| Material to be etched | Recipe: SIO2_ICP | SIO2_ICP on stoic Nit | SIO2_ICP on low-stress Nit | SIO2_ICP on Si |
|---|---|---|---|---|
| Etch rate in SiO2 | 155 nm/min in the center, 125nm/min in the edges
(03052023 mfarin @ DTU nanolab) |
194 nm/min
(24052023 mfarin @ DTU nanolab) |
190 nm/min
(24052023 mfarin @ DTU nanolab) |
|
| Etch rate in resist (AZ 5214E) | 108 nm/min in the center, 98nm/min in the edges
(03052023 mfarin @ DTU nanolab) |
|||
| Selectivity (SiO2:resist) | 1.45 | |||
| Etch rate in silicon | ||||
| Profile Images |
|
- More tests will be done regarding silicon and silicon nitride, since this recipe can be used for overetch.