Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions
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== nano1.42 versus pxnano2 == | == nano1.42 versus pxnano2 == | ||
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<gallery caption="The results" widths="500" heights="350" perrow="2"> | <gallery caption="The results" widths="500" heights="350" perrow="2"> | ||
image:WF_2E09a_mar23_2011-030.jpg|The 30 nm trenches etched 120 seconds | image:WF_2E09a_mar23_2011-030.jpg|'''nano1.42:''' The 30 nm trenches etched 120 seconds | ||
image:WF_2E09b_mar23_2011-030.jpg|The 30 nm trenches etched 96 seconds | image:WF_2E09b_mar23_2011-030.jpg|'''pxnano2:''' The 30 nm trenches etched 96 seconds | ||
image:WF_2E09a_mar23_2011-060.jpg|The 60 nm trenches etched 120 seconds | image:WF_2E09a_mar23_2011-060.jpg|'''nano1.42:''' The 60 nm trenches etched 120 seconds | ||
image:WF_2E09b_mar23_2011-060.jpg|The 60 nm trenches etched 96 seconds | image:WF_2E09b_mar23_2011-060.jpg|'''pxnano2:''' The 60 nm trenches etched 96 seconds | ||
image:WF_2E09a_mar23_2011-090.jpg|The 90 nm trenches etched 120 seconds | image:WF_2E09a_mar23_2011-090.jpg|'''nano1.42:''' The 90 nm trenches etched 120 seconds | ||
image:WF_2E09b_mar23_2011-090.jpg|The 90 nm trenches etched 96 seconds | image:WF_2E09b_mar23_2011-090.jpg|'''pxnano2:''' The 90 nm trenches etched 96 seconds | ||
image:WF_2E09a_mar23_2011-120.jpg|The 120 nm trenches etched 120 seconds | image:WF_2E09a_mar23_2011-120.jpg|'''nano1.42:''' The 120 nm trenches etched 120 seconds | ||
image:WF_2E09b_mar23_2011-120.jpg|The 120 nm trenches etched 96 seconds | image:WF_2E09b_mar23_2011-120.jpg|'''pxnano2:''' The 120 nm trenches etched 96 seconds | ||
image:WF_2E09a_mar23_2011-150.jpg|The 150 nm trenches etched 120 seconds | image:WF_2E09a_mar23_2011-150.jpg|'''nano1.42:''' The 150 nm trenches etched 120 seconds | ||
image:WF_2E09b_mar23_2011-150.jpg|The 150 nm trenches etched 96 seconds | image:WF_2E09b_mar23_2011-150.jpg|'''pxnano2:''' The 150 nm trenches etched 96 seconds | ||
</gallery> | </gallery> | ||
{| {{table}} align="left" | |||
{| {{table}} | |+ nano1.42 on the Pegasus | ||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | | align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | ||
| align="center" style="background:#f0f0f0;"|'''''' | | align="center" style="background:#f0f0f0;"|'''''' | ||
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| zep||nm/min||||||||||||66|| | | zep||nm/min||||||||||||66|| | ||
|- | |- | ||
| || | |} | ||
| | {| {{table}} align="center" | ||
| Nominal trench line width||||30||60||90||120||150||Average||Std. dev. | |+ pxnano2 on the ASE | ||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''30''' | |||
| align="center" style="background:#f0f0f0;"|'''60''' | |||
| align="center" style="background:#f0f0f0;"|'''90''' | |||
| align="center" style="background:#f0f0f0;"|'''120''' | |||
| align="center" style="background:#f0f0f0;"|'''150''' | |||
| align="center" style="background:#f0f0f0;"|'''Average''' | |||
| align="center" style="background:#f0f0f0;"|'''Std. dev.''' | |||
|- | |- | ||
| Etch rates||nm/min||215||232||240||243||244||235||12 | | Etch rates||nm/min||215||232||240||243||244||235||12 |
Latest revision as of 11:36, 28 June 2023
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Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
nano1.42 versus pxnano2
Recipe | nano1.42 | pxnano2 | ||
---|---|---|---|---|
Tool | Pegasus | ASE | ||
Parameters | Gas | C4F8 75 sccm, SF6 38 sccm | D: C4F8 50 sccm | E: C4F8 50 sccm, SF6 50 sccm |
Power | 800 W CP, 40 W PP | D: 500 W CP | E: 350 W CP, 30 W PP | |
Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | 10 mTorr | ||
Temperature | -20 degs | 20 degrees | ||
Hardware | 100 mm Spacers | ? | ||
Time | 120 secs | D: 3 secs, E: 5 secs, total 12 cycles or 96 secs | ||
Conditions | Run ID | 2150 | wf_2e09b_mar23 | |
Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | none | ||
Mask | 211 nm zep etched down to 80 nm | 211 nm zep etched down to 130 nm |
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nano1.42: The 30 nm trenches etched 120 seconds
-
pxnano2: The 30 nm trenches etched 96 seconds
-
nano1.42: The 60 nm trenches etched 120 seconds
-
pxnano2: The 60 nm trenches etched 96 seconds
-
nano1.42: The 90 nm trenches etched 120 seconds
-
pxnano2: The 90 nm trenches etched 96 seconds
-
nano1.42: The 120 nm trenches etched 120 seconds
-
pxnano2: The 120 nm trenches etched 96 seconds
-
nano1.42: The 150 nm trenches etched 120 seconds
-
pxnano2: The 150 nm trenches etched 96 seconds
Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
Etch rates | nm/min | 149 | 161 | 166 | 169 | 170 | 163 | 9 |
Sidewall angle | degs | 91 | 91 | 90 | 90 | 90 | 90 | 0 |
CD loss | nm/edge | 3 | -11 | -12 | -34 | -36 | -18 | 17 |
CD loss foot | nm/edge | 9 | 1 | 1 | -20 | -9 | -4 | 11 |
Bowing | 4 | 4 | 2 | 6 | 2 | 4 | 2 | |
Bottom curvature | -46 | -40 | -37 | -31 | -23 | -35 | 9 | |
zep | nm/min | 66 |
Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
Etch rates | nm/min | 215 | 232 | 240 | 243 | 244 | 235 | 12 |
Sidewall angle | degs | 90 | 89 | 89 | 89 | 89 | 89 | 0 |
CD loss | nm/edge | 1 | -10 | -11 | -33 | -33 | -17 | 15 |
CD loss foot | nm/edge | 6 | 2 | 1 | -19 | -6 | -3 | 10 |
Bowing | 4 | 2 | 4 | 3 | 1 | 3 | 1 | |
Bottom curvature | -36 | -29 | -22 | -19 | -17 | -25 | 8 | |
zep | nm/min | 51 | ||||||