Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2 click here]'''
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{{contentbydryetch}}
== nano1.42 versus pxnano2 ==
== nano1.42 versus pxnano2 ==


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! colspan="2"| Tool
! colspan="2"| Tool
| Pegasus
| Pegasus
| colspan="2" align="center"| ASE
| colspan="2"| ASE
|-
|-
! rowspan="6" align="center"| Parameters
! rowspan="6" align="center"| Parameters
Line 52: Line 59:
|-  
|-  
|}
|}




<gallery caption="The results" widths="500" heights="350" perrow="2">
<gallery caption="The results" widths="500" heights="350" perrow="2">


image:WF_2E09a_mar23_2011-030.jpg|The 30 nm trenches etched 120 seconds nano1.42
image:WF_2E09a_mar23_2011-030.jpg|'''nano1.42:''' The 30 nm trenches etched 120 seconds  
image:WF_2E09b_mar23_2011-030.jpg|The 30 nm trenches etched 96 seconds pxnano2
image:WF_2E09b_mar23_2011-030.jpg|'''pxnano2:''' The 30 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-060.jpg|The 60 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-060.jpg|'''nano1.42:''' The 60 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-060.jpg|The 60 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-060.jpg|'''pxnano2:''' The 60 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-090.jpg|The 90 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-090.jpg|'''nano1.42:''' The 90 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-090.jpg|The 90 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-090.jpg|'''pxnano2:''' The 90 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-120.jpg|The 120 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-120.jpg|'''nano1.42:''' The 120 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-120.jpg|The 120 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-120.jpg|'''pxnano2:''' The 120 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-150.jpg|The 150 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-150.jpg|'''nano1.42:''' The 150 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-150.jpg|The 150 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-150.jpg|'''pxnano2:''' The 150 nm trenches etched 96 seconds


</gallery>
</gallery>
{| {{table}} align="left"
|+ nano1.42 on the Pegasus
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rates||nm/min||149||161||166||169||170||163||9
|-
| Sidewall angle||degs||91||91||90||90||90||90||0
|-
| CD loss||nm/edge||3||-11||-12||-34||-36||-18||17
|-
| CD loss foot||nm/edge||9||1||1||-20||-9||-4||11
|-
| Bowing||||4||4||2||6||2||4||2
|-
| Bottom curvature||||-46||-40||-37||-31||-23||-35||9
|-
| zep||nm/min||||||||||||66||
|-
|}
{| {{table}} align="center"
|+ pxnano2 on the ASE
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rates||nm/min||215||232||240||243||244||235||12
|-
| Sidewall angle||degs||90||89||89||89||89||89||0
|-
| CD loss||nm/edge||1||-10||-11||-33||-33||-17||15
|-
| CD loss foot||nm/edge||6||2||1||-19||-6||-3||10
|-
| Bowing||||4||2||4||3||1||3||1
|-
| Bottom curvature||||-36||-29||-22||-19||-17||-25||8
|-
| zep||nm/min||||||||||||51||
|-
|
|}

Latest revision as of 11:36, 28 June 2023

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Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

nano1.42 versus pxnano2

Recipe nano1.42 pxnano2
Tool Pegasus ASE
Parameters Gas C4F8 75 sccm, SF6 38 sccm D: C4F8 50 sccm E: C4F8 50 sccm, SF6 50 sccm
Power 800 W CP, 40 W PP D: 500 W CP E: 350 W CP, 30 W PP
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr 10 mTorr
Temperature -20 degs 20 degrees
Hardware 100 mm Spacers ?
Time 120 secs D: 3 secs, E: 5 secs, total 12 cycles or 96 secs
Conditions Run ID 2150 wf_2e09b_mar23
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs none
Mask 211 nm zep etched down to 80 nm 211 nm zep etched down to 130 nm


  • The results
  • nano1.42: The 30 nm trenches etched 120 seconds
    nano1.42: The 30 nm trenches etched 120 seconds
  • pxnano2: The 30 nm trenches etched 96 seconds
    pxnano2: The 30 nm trenches etched 96 seconds
  • nano1.42: The 60 nm trenches etched 120 seconds
    nano1.42: The 60 nm trenches etched 120 seconds
  • pxnano2: The 60 nm trenches etched 96 seconds
    pxnano2: The 60 nm trenches etched 96 seconds
  • nano1.42: The 90 nm trenches etched 120 seconds
    nano1.42: The 90 nm trenches etched 120 seconds
  • pxnano2: The 90 nm trenches etched 96 seconds
    pxnano2: The 90 nm trenches etched 96 seconds
  • nano1.42: The 120 nm trenches etched 120 seconds
    nano1.42: The 120 nm trenches etched 120 seconds
  • pxnano2: The 120 nm trenches etched 96 seconds
    pxnano2: The 120 nm trenches etched 96 seconds
  • nano1.42: The 150 nm trenches etched 120 seconds
    nano1.42: The 150 nm trenches etched 120 seconds
  • pxnano2: The 150 nm trenches etched 96 seconds
    pxnano2: The 150 nm trenches etched 96 seconds
nano1.42 on the Pegasus
Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rates nm/min 149 161 166 169 170 163 9
Sidewall angle degs 91 91 90 90 90 90 0
CD loss nm/edge 3 -11 -12 -34 -36 -18 17
CD loss foot nm/edge 9 1 1 -20 -9 -4 11
Bowing 4 4 2 6 2 4 2
Bottom curvature -46 -40 -37 -31 -23 -35 9
zep nm/min 66
pxnano2 on the ASE
Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rates nm/min 215 232 240 243 244 235 12
Sidewall angle degs 90 89 89 89 89 89 0
CD loss nm/edge 1 -10 -11 -33 -33 -17 15
CD loss foot nm/edge 6 2 1 -19 -6 -3 10
Bowing 4 2 4 3 1 3 1
Bottom curvature -36 -29 -22 -19 -17 -25 8
zep nm/min 51
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