Specific Process Knowledge/Etch/DRIE-Pegasus/ProcessA/PrA-2: Difference between revisions
No edit summary |
No edit summary |
||
| (One intermediate revision by the same user not shown) | |||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/ProcessA/PrA-2 click here]''' | |||
<!--Checked for updates on 30/7-2018 - ok/jmli --> | <!--Checked for updates on 30/7-2018 - ok/jmli --> | ||
<!--Checked for updates on 5/10-2020 - ok/jmli --> | |||
<!--Checked for updates on 28/6-2023 - ok/jmli --> | |||
{{contentbydryetch}} | |||
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | {| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | ||
Latest revision as of 11:36, 28 June 2023
Feedback to this page: click here
Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
| Date | Substrate Information | Process Information | SEM Images | |||
|---|---|---|---|---|---|---|
| Wafer info | Exposed area | Conditioning | Recipe | Wafer ID | ||
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-2, 80 cycles or 14:40 minutes | C03991.03 |
|
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-2, 80 cycles or 14:40 minutes | C03991.06 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-2, 80 cycles or 14:40 minutes | C04047.03 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-2, 80 cycles or 14:40 minutes | C04047.06 |
|
