Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch/polySOI10: Difference between revisions
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Latest revision as of 11:34, 28 June 2023
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Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
Date | Substrate Information | Process Information | SEM Images | ||||||
---|---|---|---|---|---|---|---|---|---|
Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
6/5-2013 | 1/4 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50%+ | Pegasus / jmli | 3min TDESC clean + 30 sec barc etch | polySOI5 , 50 cycles or 6:15 minutes | S003472 | ||
16/7-2013 | 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50%+ | Pegasus/jmli | 3 minute TDESC clean + 30 second barc etch | jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes | S003614 | lsh: c4f8 etch -> 20 | |
23/8-2013 | 1/4 6" tigre 400 nm pitch pattern CB on oxide carrier | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50 % in 20*20 mm squares | Pegasus / jmli | 10 minute TDESC clean + 30 second barc etch | jml/SOI3/polySOI-10: 100 cycles or 12:30 minutes | S003695 | ||
15/5-2014 | 6" DUV Lithography test pattern | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50 % in 20*20 mm squares | Pegasus / jmli | 10 minute TDESC clean + 30 second barc etch | jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes + 2 mins gentle PR strip | S004031 | ||
28/8-2014 | 6" DUVboxA wafer | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50%+ | Pegasus / jmli | 30 sec barc etch | SOI4\polySOI-10 , 70 cycles or 8:45 minutes | S004289 | ||
28/8-2014 | 6" DUVboxB wafer | Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf) | poly / 50%+ | Pegasus / jmli | 75 sec barc etch | SOI4\polySOI-10 , 20 cycles or 2:30 minutes | S004289 | ||
28/8-2014 | 6" DUVboxB wafer | Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf) | poly / 50%+ | Pegasus / jmli | 0 sec barc etch | SOI4\polySOI-10 , 30 + 10 cycles or 5:00 minutes | S004291 (two processes) | S004289 reprocessed, probably overetched -> no spikes |