Specific Process Knowledge/Etch/DRIE-Pegasus/processA/PrA-0: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA/PrA-0 click here]'''


<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
<!--Checked for updates on 28/6-2023 - ok/jmli -->
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{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
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! colspan="2" width="120"| Substrate Information
! colspan="2" width="120"| Substrate Information
! colspan="3" | Process Information
! colspan="3" | Process Information
! rowspan="2" width="500" |SEM Images
! rowspan="2" |SEM Images
|-
|-
! width="30" | Wafer info
! width="30" | Wafer info
! width="40" | Material/ Exposed area
! width="40" | Exposed area
! width="40" | Conditioning
! width="40" | Conditioning
! width="40" | Recipe
! width="40" | Recipe
! width="40" | Wafer ID
! width="40" | Wafer ID
|-
|-
| 18/8-2014
| 2/5-2016
| 4" Danchip QC Wafer  
| 4" Travka20 Wafer  
| 1.5 µm AZ resist, daq2 mask
| 20 % Si
| Si / 10 %  
| 3 minute TDESC clean
| Pegasus/jmli
| PrA-0, 80 cycles or 14:40 minutes
| 10 minute TDESC clean, 10 minute PR strip post process
| C03991.01
| danchip/QC/QCprocA, 55 cycles (11+44) or 10:05 minutes  
|
| S004257
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! OLD showerhead
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|-
| 2/5-2016
| 4" Travka20 Wafer
| 20 % Si
| 3 minute TDESC clean
| PrA-0, 80 cycles or 14:40 minutes
| C03991.04
|
[[file:C03991.04 120.jpg|150px|frameless ]]
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|-
| 3/6-2016
| 4" Travka20 Wafer
| 20 % Si
| 3 minute TDESC clean
| PrA-0, 80 cycles or 14:40 minutes
| C04047.01
|
[[file:C04047.01 081.jpg|150px|frameless ]]
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|-
| 3/6-2016
| 4" Travka20 Wafer
| 20 % Si
| 3 minute TDESC clean
| PrA-0, 80 cycles or 14:40 minutes  
| C04047.04
|  
|  
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|-
|-
|}
|}

Latest revision as of 11:32, 28 June 2023

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Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

Process runs
Date Substrate Information Process Information SEM Images
Wafer info Exposed area Conditioning Recipe Wafer ID
2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C03991.01

2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C03991.04

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C04047.01

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C04047.04