Specific Process Knowledge/Etch/DRIE-Pegasus/processA/PrA-1: Difference between revisions
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Latest revision as of 11:32, 28 June 2023
Feedback to this page: click here
Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
| Date | Substrate Information | Process Information | SEM Images | |||
|---|---|---|---|---|---|---|
| Wafer info | Exposed area | Conditioning | Recipe | Wafer ID | ||
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C03991.02 |
|
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C03991.05 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C04047.02 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C04047.05 |
|
