Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum&action=edit click here]''' | ||
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
== Tantalum deposition == | == Tantalum deposition == | ||
Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment. | Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment. | ||
==Sputtering of Tantalum== | |||
You can read more about Ta sputter deposition using Sputter-System(Lesker) | |||
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta|Sputtering of Ta in Sputter-System (Lesker)]]. | |||
== E-beam evaporation of Tantalum == | |||
Tantalum can be deposited by e-beam assisted evaporation in the Temescal tool. | |||
*[[/Ta Ebeam evaporation in Temescal |E-beam evaporation of Ta in Temescal]] | |||
<!----> | |||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
| Line 12: | Line 27: | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]]) | ! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
| Line 17: | Line 33: | ||
| E-beam deposition of Ta | | E-beam deposition of Ta | ||
(line-of-sight deposition) | (line-of-sight deposition) | ||
| Sputter deposition of Ta | |||
(not line-of-sight) | |||
| Sputter deposition of Ta | | Sputter deposition of Ta | ||
(not line-of-sight) | (not line-of-sight) | ||
| Line 24: | Line 42: | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion source | |Ar ion source | ||
|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to 0. | |10Å to 0.2 µm* | ||
|10Å to ? | |||
|10Å to ? | |10Å to ? | ||
|- | |- | ||
| Line 35: | Line 55: | ||
|0.5Å/s to 10Å/s | |0.5Å/s to 10Å/s | ||
|~0.3Å/s | |~0.3Å/s | ||
|at least in the range 1 Å/s to 4 Å/s | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
| Line 46: | Line 67: | ||
*1x4" wafer or | *1x4" wafer or | ||
*1x6" wafer | *1x6" wafer | ||
| | |||
*Pieces or | |||
*10x4" wafer or | |||
*10x6" wafer | |||
|- | |- | ||
| Line 62: | Line 87: | ||
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon nitride | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
* Carbon | |||
| | | | ||
* Silicon | * Silicon | ||
| Line 76: | Line 112: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| | | Tantalum deposition heats the chamber* | ||
| 2-inch Ta target | |||
| | | 3-inch Ta target | ||
|} | |} | ||
'''*''' ''If | '''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].'' | ||
Latest revision as of 12:13, 13 June 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Tantalum deposition
Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.
Sputtering of Tantalum
You can read more about Ta sputter deposition using Sputter-System(Lesker)
E-beam evaporation of Tantalum
Tantalum can be deposited by e-beam assisted evaporation in the Temescal tool.
| E-beam evaporation (Temescal) | Sputter (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
|---|---|---|---|
| General description | E-beam deposition of Ta
(line-of-sight deposition) |
Sputter deposition of Ta
(not line-of-sight) |
Sputter deposition of Ta
(not line-of-sight) |
| Pre-clean | Ar ion source | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 0.2 µm* | 10Å to ? | 10Å to ? |
| Deposition rate | 0.5Å/s to 10Å/s | ~0.3Å/s | at least in the range 1 Å/s to 4 Å/s |
| Batch size |
|
|
|
| Allowed materials |
|
|
|
| Comment | Tantalum deposition heats the chamber* | 2-inch Ta target | 3-inch Ta target |
* The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the Thin film group.