Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions

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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


== Molybdenum deposition ==
== Molybdenum deposition ==
Molybdenum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.  
Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.  


{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])  
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])  
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| E-beam deposition of Mo  
| E-beam deposition of Mo  
| Sputter deposition of Mo  
(line-of-sight deposition)
| Sputter deposition of Mo
(not line-of-sight)
| Sputter deposition of Mo
(not line-of-sight)
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion source
|Ar ion source
|RF Ar clean
|RF Ar clean
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 0.6 µm*
|10Å to 0.2 µm*
|10Å to 500 Å
|10Å to 500 Å
|10Å to ? ''discuss with staff''
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|1Å/s to 10Å/s
|1Å/s to 10Å/s
| Depends on process parameters, roughly about 1 Å/s
| Depends on process parameters, roughly about 1 Å/s
| Not known yet, probably similar to 'old' Lesker sputter system
|-
|-
|-
|-
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* 1x4" wafer or
* 1x4" wafer or
* 1x6" wafer  
* 1x6" wafer  
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-


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* Mylar  
* Mylar  
* SU-8  
* SU-8  
|
Almost any as long as it does not outgas.
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
| As of August 2018, Mo has not yet been deposited in the Temescal.  
| As of June 2023, Mo has not yet been deposited in the Temescal.
Please contact the Thin Film group to develop a process.
| Sputter target size 2".
| Sputter target size 3-4" (usually 3"). As of June 2023, Mo has not yet been deposited in the 'new' Lesker sputter chambers.  
Please contact the Thin Film group to develop a process.
Please contact the Thin Film group to develop a process.
|
|-
|-


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'''*'''  ''If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.''
'''*'''  ''Depending on the amount of heating during Mo deposition, which we will discover during process development.''

Latest revision as of 10:48, 9 June 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal

Molybdenum deposition

Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.

E-beam evaporation (Temescal) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Mo

(line-of-sight deposition)

Sputter deposition of Mo

(not line-of-sight)

Sputter deposition of Mo

(not line-of-sight)

Pre-clean Ar ion source RF Ar clean RF Ar clean
Layer thickness 10Å to 0.2 µm* 10Å to 500 Å 10Å to ? discuss with staff
Deposition rate 1Å/s to 10Å/s Depends on process parameters, roughly about 1 Å/s Not known yet, probably similar to 'old' Lesker sputter system
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8

Almost any as long as it does not outgas.

Comment As of June 2023, Mo has not yet been deposited in the Temescal.

Please contact the Thin Film group to develop a process.

Sputter target size 2". Sputter target size 3-4" (usually 3"). As of June 2023, Mo has not yet been deposited in the 'new' Lesker sputter chambers.

Please contact the Thin Film group to develop a process.


* Depending on the amount of heating during Mo deposition, which we will discover during process development.

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