Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide: Difference between revisions

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Thin films of hafnium oxide, HfO<sub>2</sub>, can both be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.
Thin films of hafnium oxide, HfO<sub>2</sub>, can both be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.


More information about hafnium oxide deposition can be found here: for [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].
More information about hafnium oxide deposition can be found here: for [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].


==Deposition of hafnium oxide==
==Deposition of hafnium oxide==
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|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD]]
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*
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]].
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*Atomic Layer Deposition
*Atomic Layer Deposition
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*(Plasma enhanced) Atomic Layer Deposition
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Stoichiometry
!Stoichiometry
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*HfO2
*HfO<sub>2</sub>
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*
*HfO<sub>2</sub>
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film Thickness
!Film Thickness
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|
* 0 nm - 50 nm  
*0 nm - 100 nm  
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*
*0 nm - 50 nm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Deposition rate
!Deposition rate
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* 0.0827 nm/cycle on a flat sample
* At 150 <sup>o</sup>C: 0.11 nm/cycle
* 0.954-0.122 nm/cycle on a high aspect ratio structures
* At 250 <sup>o</sup>C: 0.0827 nm/cycle
|
|
*
* At 250 <sup>o</sup>C: 0.0804 nm/cycle
* At 250 <sup>o</sup>C on trenches: 0.954-1.22 nm/cycle
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
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*Very good.
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|
*Very good
*Very good
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*
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Process Temperature
!Temperature window
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* 150 - 300<sup>o</sup>C
*150 <sup>o</sup>C - 300 <sup>o</sup>C
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*
*150 <sup>o</sup>C - 300 <sup>o</sup>C
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Substrate size
!Substrate size
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*Several small samples
*1-5 100 mm wafers (only good uniformity for the top wafer)
*1-5 50 mm wafers
*1-5 150 mm wafer (only good uniformity for the top wafer)
*1-5 100 mm wafers
*1 200 mm wafer
*1-5 150 mm wafer
*Several smaller samples
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|
*
*1 100 mm wafer
*1 150 mm wafer
*1 200 mm wafer
*Several smaller samples
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*Silicon oxide, silicon nitride
*Silicon oxide, silicon nitride
*Quartz/fused silica  
*Quartz/fused silica  
*Al, Al<sub>2</sub>O<sub>3</sub>
*Metals (use dedicated carrier wafer)
*Ti, TiO<sub>2</sub>
*Other metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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|
*
*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
|-
|-
|}
|}

Latest revision as of 10:35, 9 June 2023

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All contents by Nanolab staff.


Deposition of Hafnium Oxide

Thin films of hafnium oxide, HfO2, can both be deposited both in the ALD1 and the ALD2 (PEALD). However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.

More information about hafnium oxide deposition can be found here: for ALD1 and for ALD2 (PEALD).

Deposition of hafnium oxide

ALD1 ALD2 (PEALD).
Generel description
  • Atomic Layer Deposition
  • (Plasma enhanced) Atomic Layer Deposition
Stoichiometry
  • HfO2
  • HfO2
Film Thickness
  • 0 nm - 100 nm
  • 0 nm - 50 nm
Deposition rate
  • At 150 oC: 0.11 nm/cycle
  • At 250 oC: 0.0827 nm/cycle
  • At 250 oC: 0.0804 nm/cycle
  • At 250 oC on trenches: 0.954-1.22 nm/cycle
Step coverage
  • Very good.
  • Very good
Temperature window
  • 150 oC - 300 oC
  • 150 oC - 300 oC
Substrate size
  • 1-5 100 mm wafers (only good uniformity for the top wafer)
  • 1-5 150 mm wafer (only good uniformity for the top wafer)
  • 1 200 mm wafer
  • Several smaller samples
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 200 mm wafer
  • Several smaller samples
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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