Specific Process Knowledge/Thin film deposition/Deposition of Nickel/Electroplating of nickel: Difference between revisions

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Electroplating of nickel: Danchip standard processes
Electroplating of nickel: DTU Nanolab standard processes


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel/Electroplating_of_nickel click here]'''
'''Feedback to this page''': '''[mailto:fabricationSupport@anolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel/Electroplating_of_nickel click here]'''


''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.''
<span style="color:Red">'''THIS EQUIPMENT HAS BEEN DECOMMISSIONED, Spring 2023.''' </span>
'''For electroplating, please contact DTU Mechanical Engineering.'''
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== Name of processes ==
== DTU Nanolab Standard Programs ==


Four different Danchip standard programs have been made. They have all been made to fabricate nickel shims for use in the polymer injection molder at Danchip. For this purpose a nickel thickness of around 320-330 µm is required. By experimentation it has been found that the required charge for this sample thickness is 18,0 Ah. The only difference between the four different standard programs are the time required for depositing the nickel. The four different standard programs deposit 320-330 µm of nickel in about 3, 4, 6 and 12 hours respectively.
Three different standard programs have been made by DTU Nanolab. They have all been made to fabricate nickel shims for use in the polymer injection molding machine at DTU Nanolab. For this purpose a nickel thickness of around 340-360 µm is optimal. By experimentation it has been found that the required charge for this sample thickness is 18,3 Ah. The only difference between the different standard programs is the time required for depositing the nickel. The three different standard programs deposit the ~350 µm of nickel in about 4, 6 or 12 hours respectively.  


The following figure shows the current profile during the first 2 hours of the programs:
The following figure shows the current profile during the first 2 hours of the programs:


[[Image:choi_2017_current_profiles.jpg|center|Current profiles of standard programs]]
[[Image:CurrentProfiles2019.png|center|Current profiles of standard programs]]
 
As can be seen from the illustration the first 30 minutes of all standard processes are identical. All processes use a slow ramping of the current. This is to make sure that some material is deposited which can conduct a higher current. Starting a plating process at several amperes is very likely to damage the sample (and possibly the sample holder) because the seed metal layer (usually 50-120 nm thick) cannot support such high currents.


The Standard programs are named using the following convention: '''DCHimmXX.X-YY''' where '''DCH''' indicates it's a process developed by Nanolab, '''imm''' that is a process developed for producing samples for the '''i'''njection '''m'''olding '''m'''achine, '''XX.X''' denotes the charge in Ah (Ampere-hours) and '''YY''' denotes the approximate process time in hours.
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel/Electroplating_of_nickel|DCHimm18-03]]
![[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel/Electroplating_of_nickel|DCHimm18.3-04]]
![[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel/Electroplating_of_nickel|DCHimm18-04]]
![[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel/Electroplating_of_nickel|DCHimm18.3-06]]
![[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel/Electroplating_of_nickel|DCHimm18-06]]
![[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel/Electroplating_of_nickel|DCHimm18.3-12]]
![[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel/Electroplating_of_nickel|DCHimm18-12]]
|-
|-
|-style="background:WhiteSmoke; color:black"
!Charge [Ah]
|18,3
|18,3
|18,3
|-
|-
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Expected nickel thickness
!Expected nickel thickness
|320-330 µm
|350 µm
|320-330 µm
|350 µm
|320-330 µm
|350 µm
|320-330 µm
|-
|-
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Maximum current [A]
!Maximum current [A]
|
7,5
|
|
5,5
5,5
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!Process time [hh:mm:ss]
!Process time [hh:mm:ss]
|
|
02:41:01
04:10:55
|
xx:xx:xx
|
|
xx:xx:xx
06:12:52
|
|
12:16:01
12:28:01
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Substrate size
!Process comments
|
|
*<nowiki>#</nowiki> small samples
A fast program that allows one to produce two samples in a normal working day. Usually works fine for rapid prototyping.
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|
|
*Allowed material 1
A compromise between desired material properties (hardness, ductility, roughness) and process time. Will result in a sample that will be useful for most standard injection molding processes.
*Allowed material 2
|
|
*Allowed material 1
A slower process that in return results in lower roughness and stronger mechanical properties. A good choice for shims that will be used with 'harsh' injection molding parameters (high temperatures and high pressures).
*Allowed material 2
*Allowed material 3
|-
|-
|}
|}
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=Example=
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''
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== Deposition of silicon nitride ==
Deposition of silicon nitride can be done with either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition). Stiochiometric nitride or silicon rich (low stress) LPCVD nitride is deposited on a batch of wafers in a LPCVD nitride furnace, and PECVD nitride (or oxynitride) is deposited on a few samples at a time in a PECVD system. LPCVD nitride has a good step coverage and a very good uniformity. Using PECVD it is possible to deposit a thicker layer of nitride on different types of samples, but the nitride does not cover sidewalls very well.
*[[/Deposition of silicon nitride using LPCVD|Nitride deposition using LPCVD]]
*[[/Deposition of silicon nitride using PECVD|Nitride deposition using PECVD]] (''or oxynitride'')
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==Comparison of LPCVD and PECVD for silicon nitride deposition==
{|border="1" cellspacing="1" cellpadding="1" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|LPCVD]]
![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]
|-
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Low Pressure Chemical Vapour Deposition (LPCVD furnace process)
|Plasma Enhanced Chemical Vapour Deposition (PECVD process)
|-
|-
|-style="background:LightGrey; color:black"
!Stoichiometry
|
*Si<sub>3</sub>N<sub>4</sub>
*SRN (only 4" nitride furnace)
Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride
SRN: Silicon rich (low stress) nitride
|
*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
Silicon nitride can be doped with boron, phosphorus or germanium
|-
|-
|-style="background:WhiteSmoke; color:black"
!Film thickness
|
*Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~1400 Å
*SRN: ~50 Å - ~2800 Å
Thicker nitride layers can be deposited over more runs
|
*~40 nm - 10 µm
|-
|-
|-style="background:LightGrey; color:black"
!Process temperature
|
*780 <sup>o</sup>C - 845 <sup>o</sup>C
|
*300 <sup>o</sup>C
|-
|-
|-style="background:WhiteSmoke; color:black"
!Step coverage
|
*Good
|
*Less good
|-
|-
|-style="background:LightGrey; color:black"
!Film quality
|
*Deposition on both sides og the substrate
*Dense film
*Few defects
|
*Deposition on one side of the substrate
*Less dense film
*Incorporation of hydrogen in the film
|-
|-
|-style="background:WhiteSmoke; color:black"
!KOH etch rate (80 <sup>o</sup>C)
|
*Expected <1 Å/min
|
*Dependent on recipe: ~1-10 Å/min
|-
|-
|-style="background:LightGrey; color:black"
!BHF etch rate
|
*Very low
|
*Very high compared the LPCVD nitride
|-
|-
|-style="background:WhiteSmoke; color:black"
!Batch size
|
*1-25 100 mm wafers
*1-25 150 mm wafers (only 6" furnace)
Depending on what furnace you use
|
*Several smaller samples
*1-several 50 mm wafers
*1-3 100 mm wafers
*1 150 mm wafer
Depending on what PECVD you use
|-
|-
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
|
*Silicon
*Silicon oxide
*Silicon nitride
*Pure quartz (fused silica)
Processed wafers have to be RCA cleaned
|
*Silicon
*Silicon oxide (with boron, phosphorous and germanium)
*Silicon nitrides (with boron, phosphorous and germanium)
*Pure quartz (fused silica)
|-
|}
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Latest revision as of 10:37, 9 June 2023

Electroplating of nickel: DTU Nanolab standard processes

Feedback to this page: click here

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

THIS EQUIPMENT HAS BEEN DECOMMISSIONED, Spring 2023.

For electroplating, please contact DTU Mechanical Engineering.

DTU Nanolab Standard Programs

Three different standard programs have been made by DTU Nanolab. They have all been made to fabricate nickel shims for use in the polymer injection molding machine at DTU Nanolab. For this purpose a nickel thickness of around 340-360 µm is optimal. By experimentation it has been found that the required charge for this sample thickness is 18,3 Ah. The only difference between the different standard programs is the time required for depositing the nickel. The three different standard programs deposit the ~350 µm of nickel in about 4, 6 or 12 hours respectively.

The following figure shows the current profile during the first 2 hours of the programs:

Current profiles of standard programs
Current profiles of standard programs

As can be seen from the illustration the first 30 minutes of all standard processes are identical. All processes use a slow ramping of the current. This is to make sure that some material is deposited which can conduct a higher current. Starting a plating process at several amperes is very likely to damage the sample (and possibly the sample holder) because the seed metal layer (usually 50-120 nm thick) cannot support such high currents.

The Standard programs are named using the following convention: DCHimmXX.X-YY where DCH indicates it's a process developed by Nanolab, imm that is a process developed for producing samples for the injection molding machine, XX.X denotes the charge in Ah (Ampere-hours) and YY denotes the approximate process time in hours.

Comparison of standard processes

DCHimm18.3-04 DCHimm18.3-06 DCHimm18.3-12
Charge [Ah] 18,3 18,3 18,3
Expected nickel thickness 350 µm 350 µm 350 µm
Maximum current [A]

5,5

3,5

1,5

Process time [hh:mm:ss]

04:10:55

06:12:52

12:28:01

Process comments

A fast program that allows one to produce two samples in a normal working day. Usually works fine for rapid prototyping.

A compromise between desired material properties (hardness, ductility, roughness) and process time. Will result in a sample that will be useful for most standard injection molding processes.

A slower process that in return results in lower roughness and stronger mechanical properties. A good choice for shims that will be used with 'harsh' injection molding parameters (high temperatures and high pressures).