Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

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''All text by DTU Nanolab staff''


== Deposition of Germanium ==
== Deposition of Germanium ==
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!  
!  
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
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! General description
! General description
|Thermal deposition of Ge
|Thermal deposition of Ge
|E-beam deposition of Ge
|E-beam deposition of Ge
|E-beam deposition of Ge
|Sputter deposition of Ge
|Sputter deposition of Ge
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|RF Ar clean
|-
| -
|Ar ion beam clean
|Ar ion beam clean
|RF Ar clean
|RF Ar clean
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! Layer thickness
! Layer thickness
|10Å to about 2000Å (in total distributed on all loaded wafers)
|10Å to about 2000Å (in total distributed on all loaded wafers)
|10Å to about 3000Å
|10Å to about 1000 nm  
|10Å to about 1000 nm  
|10Å to at least 1000 Å
|10Å to at least 1000 Å
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! Deposition rate
! Deposition rate
|From 0.4 Å/s up to about ~2Å/s  
|From 0.4 Å/s up to about ~2Å/s  
|5 Å/s
|From 1 Å/s up to 5 Å/s  
|From 1 Å/s up to 5 Å/s  
|Depends on deposition parameters
|Depends on deposition parameters
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*6x 6" wafers or
*6x 6" wafers or
Many small pieces
Many small pieces
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|
|
*Up to 4 x 6" wafer or
*Up to 4 x 6" wafer or
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! Allowed substrates
! Allowed substrates
|
|
* Silicon wafers
*Almost any that does not degas. See also the cross-contamination sheet
* Quartz wafers
* Pyrex wafers
|
* III-V materials
* Silicon wafers
* Quartz wafers
* Pyrex wafers
|
|
*Silicon wafers
*Almost any that does not degas. See also the cross-contamination sheet
*Quartz wafers
*Pyrex wafers
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]


|
|
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* SU-8  
* SU-8  
* Metals  
* Metals  
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
|
|
*Silicon oxide
*Silicon oxide
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! Comment
! Comment
|Recommended for unexposed e-beam resist
|Recommended for unexposed e-beam resist
|
|
|
|
|
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|}
|}

Revision as of 15:58, 6 June 2023

Feedback to this page: click here

All text by DTU Nanolab staff

Deposition of Germanium

Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.

Thermal deposition


Ge deposition equipment comparison


Thermal evaporation (Wordentec) E-beam evaporation (Temescal) Sputtering (Lesker) Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description Thermal deposition of Ge E-beam deposition of Ge Sputter deposition of Ge Sputter deposition of Ge
Pre-clean
Ar ion beam clean RF Ar clean RF Ar clean
Layer thickness 10Å to about 2000Å (in total distributed on all loaded wafers) 10Å to about 1000 nm 10Å to at least 1000 Å 10Å to ?
Deposition rate From 0.4 Å/s up to about ~2Å/s From 1 Å/s up to 5 Å/s Depends on deposition parameters Depends on deposition parameters
Batch size
  • 24x 2" wafers or
  • 6x 4" wafers or
  • 6x 6" wafers or

Many small pieces

  • Up to 4 x 6" wafer or
  • 3x 8" wafers (ask for special holder)
  • Many smaller pieces
  • 1x6" wafer or
  • 1x4" wafer or

smaller pieces

  • 10x6" or 4" wafers
  • many smaller pieces
Allowed substrates
  • Almost any that does not degas. See also the cross-contamination sheet
  • Almost any that does not degas. See also the cross-contamination sheet
  • Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheet
  • Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheets
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Almost any as above
  • Almost any as above
Comment Recommended for unexposed e-beam resist
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