Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions
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Silicon | = Silicon sputtering in the Wordentec= | ||
Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]] (results [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)|here]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|here]]). | |||
==Parameters== | |||
Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | ||
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In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at 500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the | In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at '''500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar''' together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=167 Wordentec Process log]. | ||
It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the [[mailto:thinfilm@nanolab.dtu.dk Thin Film group]]. | |||
Latest revision as of 09:44, 6 June 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Silicon sputtering in the Wordentec
Silicon can be sputter deposited in the Wordentec as well as in the Sputter-System(Lesker) (details on sputtering Si in the Sputter-System Lesker here) and in the new Cluster Lesker (results here and here).
Parameters
Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
Do not use the power more than 180 W without consulting staff, since the Si target could break into a lot of small pieces.
| Settings 1 | Settings 2 | |
|---|---|---|
| Process type | Sputtering | Sputtering |
| Power | 130W | 170W |
| Sputter pressure | 5*10-3 mbar | 1*10-2 mbar |
| Rate | About 0.7 Å/s | About 0.6 Å/s |
In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at 500 W with a low sputter pressure of 2*10-3 mbar together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the Wordentec Process log.
It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the [Thin Film group].