Specific Process Knowledge/Thin film deposition/Deposition of AZO: Difference between revisions

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''All content by DTU Nanolab staff''.


AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.
=AZO deposition=
 
AZO can be deposited by sputtering or atomic layer deposition (ALD). In sputter-deposition of AZO, we use an AZO target that may be RF-sputtered or reactively DC-sputtered. You can also co-deposit Al and ZnO. Note that in multipurpose sputter systems such as ours it may be difficult to obtain low enough contamination for high-quality AZO. Talk to Nanolab staff or your colleagues if you would like to locate a sputter system that can be dedicated to AZO-deposition.
 
In the chart below you can compare the different deposition equipment available here at Nanolab:




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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
!Sputter deposition [[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
! Sputtering deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]])
! Atomic layer deposition ([[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]])
! Atomic layer deposition ([[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]])
|-
|-
|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! General description
! General description
| Sputter deposition of AZO
|  
| Atomic layer deposition of AZO
*Reactive DC sputtering
*pulsed DC sputtering
*RF sputtering
*Reactive HiPIMS (high-power impulse magnetron sputtering)
|  
*Reactive DC sputtering
*RF sputtering
|
*Atomic layer deposition of AZO
|-
|-
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|
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|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! Layer thickness
! Layer thickness
|few nm to ? hundreds of nm*
|10Å to 5000Å*
|10Å to 5000Å*
|0 to 1000 Å
|0 to 1000 Å
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! Deposition rate
! Deposition rate
|Depending on process parameters.  
|Depending on process parameters.  
|Depending on process parameters, e.g., 0.3 Å/s reactive DC-sputtering (see process log for details)
|Depending on temperature
|Depending on temperature
|-
|-
|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! Batch size
! Batch size
|
*Many smaller samples
*Up to 10x4" or 6" wafers (Cassette load in the LL)
|
|
*Pieces or  
*Pieces or  
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|-style="background:LightGrey;  color:black"
|-style="background:LightGrey;  color:black"
!Allowed materials
!Allowed materials
 
|
*Almost any that do not outgas and are not very toxic
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]
|
|
* Silicon
* Silicon
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! Comment
! Comment
|
|
*Use 2 inch target
*Uses 3" target
*Substrate rotation
*Substrate RF bias option
|
*Uses 2" target
*Substrate rotation
*Substrate rotation
*Substrate RF Bias (optional)
*Substrate RF Bias (optional)
|
|
|}
|}
'''*''' ''For thicknesses above 200 nm permission is required.''
'''*''' ''For thicknesses above 200 nm permission is required. Write to [mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk].''

Latest revision as of 13:42, 2 June 2023

Feedback to this page: click here

All content by DTU Nanolab staff.

AZO deposition

AZO can be deposited by sputtering or atomic layer deposition (ALD). In sputter-deposition of AZO, we use an AZO target that may be RF-sputtered or reactively DC-sputtered. You can also co-deposit Al and ZnO. Note that in multipurpose sputter systems such as ours it may be difficult to obtain low enough contamination for high-quality AZO. Talk to Nanolab staff or your colleagues if you would like to locate a sputter system that can be dedicated to AZO-deposition.

In the chart below you can compare the different deposition equipment available here at Nanolab:


Sputter deposition Sputter-system Metal-Oxide(PC1) Sputter deposition (Sputter-System(Lesker)) Atomic layer deposition (ALD Picosun R200)
General description
  • Reactive DC sputtering
  • pulsed DC sputtering
  • RF sputtering
  • Reactive HiPIMS (high-power impulse magnetron sputtering)
  • Reactive DC sputtering
  • RF sputtering
  • Atomic layer deposition of AZO
Pre-clean RF Ar clean RF Ar clean
Layer thickness few nm to ? hundreds of nm* 10Å to 5000Å* 0 to 1000 Å
Deposition rate Depending on process parameters. Depending on process parameters, e.g., 0.3 Å/s reactive DC-sputtering (see process log for details) Depending on temperature
Batch size
  • Many smaller samples
  • Up to 10x4" or 6" wafers (Cassette load in the LL)
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer or
  • 1x8" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)


Comment
  • Uses 3" target
  • Substrate rotation
  • Substrate RF bias option
  • Uses 2" target
  • Substrate rotation
  • Substrate RF Bias (optional)

* For thicknesses above 200 nm permission is required. Write to thinfilm@nanolab.dtu.dk.