Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions
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|Etch rate in SiO2 | |Etch rate in SiO2 | ||
|155 nm/min in the center, 125nm/min in the edges. | |155 nm/min in the center, 125nm/min in the edges. | ||
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|Etch rate in resist (AZ 5214E) | |Etch rate in resist (AZ 5214E) | ||
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|Profile Images | |Profile Images | ||
Revision as of 15:16, 15 May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
| Parameter | Recipe name: SiO2_ICP |
|---|---|
| Coil Power [W] | 1000 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 20 |
| C4F8 flow [sccm] | 10 |
| H2 flow [sccm] | 28 |
| Pressure [mTorr] | 2.5 |
Results when etching a patterned wafer
| Material to be etched | Recipe: SIO2_ICP | Testing othe etch rate in nitride |
|---|---|---|
| Etch rate in SiO2 | 155 nm/min in the center, 125nm/min in the edges. | |
| Etch rate in resist (AZ 5214E) | 108 nm/min in the center, 98nm/min in the edges | |
| Selectivity (SiO2:resist) | 1.45 | |
| Etch rate in silicon | ||
| Profile Images |