Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2

This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.

Parameter	Recipe name: SiO2_ICP
Coil Power [W]	1000
Platen Power [W]	200
Platen temperature [oC]	20
C4F8 flow [sccm]	10
H2 flow [sccm]	28
Pressure [mTorr]	2.5

Results when etching a patterned wafer

Material to be etched	Recipe: SIO2_ICP	Testing othe etch rate in nitride
Etch rate in SiO2	155 nm/min in the center, 125nm/min in the edges.	?
Etch rate in resist (AZ 5214E)	108 nm/min in the center, 98nm/min in the edges
Selectivity (SiO2:resist)	1.45
Etch rate in silicon		4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117 2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
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