Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions

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|Coil Power [W]
|Coil Power [W]
|150
|1000
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|Platen Power [W]
|Platen Power [W]
|25
|200
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|Platen temperature [<sup>o</sup>C]
|Platen temperature [<sup>o</sup>C]
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|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|36
|10
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|H<sub>2</sub> flow [sccm]
|H<sub>2</sub> flow [sccm]
|13
|28
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|He flow [sccm]
|0
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|Pressure [mTorr]
|Pressure [mTorr]

Revision as of 14:29, 15 May 2023

This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.


Parameter Recipe name: SiO2_ICP
Coil Power [W] 1000
Platen Power [W] 200
Platen temperature [oC] 20
C4F8 flow [sccm] 10
H2 flow [sccm] 28
Pressure [mTorr] 2.5

Results when etching a patterned wafer

Material to be etched Recipe: SIO2_ICP Testing othe etch rate in nitride
Etch rate in SiO2 22.1 nm/min ?
Etch rate in PECVD nitride . 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729)
Etch rate in LPCVD nitride . 23.7 nm/min in the middle, 17 nm/min close to the edge
Etch rate in resist (MIR) 12.5 nm/min 13.9 nm/min
Selectivity (SiO2:resist) 1.8 1.9
Etch rate in silicon
  • 4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117
  • 2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
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