Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions
Jump to navigation
Jump to search
Line 30: | Line 30: | ||
|} | |} | ||
====Results when etching a | ====Results when etching a patterned wafer ==== | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" |
Revision as of 14:25, 15 May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
Parameter | Recipe name: SiO2_ICP |
---|---|
Coil Power [W] | 150 |
Platen Power [W] | 25 |
Platen temperature [oC] | 20 |
C4F8 flow [sccm] | 36 |
H2 flow [sccm] | 13 |
He flow [sccm] | 0 |
Pressure [mTorr] | 2.5 |
Results when etching a patterned wafer
Material to be etched | Recipe: SIO2_ICP | Testing othe etch rate in nitride |
---|---|---|
Etch rate in SiO2 | 22.1 nm/min | ? |
Etch rate in PECVD nitride | . | 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729) |
Etch rate in LPCVD nitride | . | 23.7 nm/min in the middle, 17 nm/min close to the edge |
Etch rate in resist (MIR) | 12.5 nm/min | 13.9 nm/min |
Selectivity (SiO2:resist) | 1.8 | 1.9 |
Etch rate in silicon |
| |
Profile Images |