Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions

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====Results when etching a piece of wafer on a Si carrier ====
====Results when etching a piece of wafer on a Si carrier ====
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:DarkGray; color:White"
!Material to be etched
!Recipe: 1SiO2_02 <span style="background:#FFD700">'''*This recipe is no longer stable.'''</span>
!Recipe: 1SiO2_03
!Testing other settings to increase etch rate in nitride
|-
|Etch rate in SiO2
|22.1 nm/min
|26.8 nm/min
|?
|-
|Etch rate in PECVD nitride
|.
|20.8nm/min (''kabi@nanolab 20190301'') - ~0nm/min (''ecsj@nanolab 20210729'')
|?
|-
|Etch rate in LPCVD nitride
|.
|only around 6 nm/min (20190820)
|23.7 nm/min in the middle, 17 nm/min close to the edge
|-
|Etch rate in resist (MIR)
|12.5 nm/min
|13.9 nm/min
|Not tested properly (still more than 1 µm left (1.5µm MIR) after 12 min
|-
|Selectivity (SiO2:resist)
|1.8
|1.9
|?
|-
|Etch rate in silicon
|
|
*4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117
*2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
|
|-
|Profile Images
|[[File:SiO2ICP26_03.jpg|200px]] [[File:SiO2ICP26_05.jpg|200px]] [[File:SiO2ICP26_07.jpg|200px]]
|[[File:SiO2ICP33_01.jpg|200px]][[File:SiO2ICP33_03.jpg|200px]][[File:SiO2ICP33_05.jpg|200px]]
|Profile not analyzed
|-
|}
<br clear="all" />




Revision as of 14:25, 15 May 2023

This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.


Parameter Recipe name: SiO2_ICP
Coil Power [W] 150
Platen Power [W] 25
Platen temperature [oC] 20
C4F8 flow [sccm] 36
H2 flow [sccm] 13
He flow [sccm] 0
Pressure [mTorr] 2.5

Results when etching a piece of wafer on a Si carrier


Material to be etched Recipe: SIO2_ICP Testing othe etch rate in nitride
Etch rate in SiO2 22.1 nm/min ?
Etch rate in PECVD nitride . 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729)
Etch rate in LPCVD nitride . 23.7 nm/min in the middle, 17 nm/min close to the edge
Etch rate in resist (MIR) 12.5 nm/min 13.9 nm/min
Selectivity (SiO2:resist) 1.8 1.9
Etch rate in silicon
  • 4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117
  • 2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
Profile Images


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