Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions

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This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
{| border="1" cellspacing="2" cellpadding="2"
|-style="background:Black; color:White"
! Parameter
|Recipe name: '''1SiO2_02'''
|Recipe name: '''1SiO2_03 '''
|Testing other settings to increase etch rate in nitride
|-
|Coil Power [W]
|150
|100
|150
|-
|Platen Power [W]
|25
|25
|25
|-
|Platen temperature [<sup>o</sup>C]
|20
|20
|20
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|36
|10
|20
|-
|H<sub>2</sub> flow [sccm]
|13
|10
|0
|-
|He flow [sccm]
|0
|100
|100
|-
|Pressure [mTorr]
|2.5
|2.5
|2.5
|-
|}
====Results when etching a piece of wafer on a Si carrier ====
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:DarkGray; color:White"
!Material to be etched
!Recipe: 1SiO2_02 <span style="background:#FFD700">'''*This recipe is no longer stable.'''</span>
!Recipe: 1SiO2_03
!Testing other settings to increase etch rate in nitride
|-
|Etch rate in SiO2
|22.1 nm/min
|26.8 nm/min
|?
|-
|Etch rate in PECVD nitride
|.
|20.8nm/min (''kabi@nanolab 20190301'') - ~0nm/min (''ecsj@nanolab 20210729'')
|?
|-
|Etch rate in LPCVD nitride
|.
|only around 6 nm/min (20190820)
|23.7 nm/min in the middle, 17 nm/min close to the edge
|-
|Etch rate in resist (MIR)
|12.5 nm/min
|13.9 nm/min
|Not tested properly (still more than 1 µm left (1.5µm MIR) after 12 min
|-
|Selectivity (SiO2:resist)
|1.8
|1.9
|?
|-
|Etch rate in silicon
|
|
*4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117
*2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
|
|-
|Profile Images
|[[File:SiO2ICP26_03.jpg|200px]] [[File:SiO2ICP26_05.jpg|200px]] [[File:SiO2ICP26_07.jpg|200px]]
|[[File:SiO2ICP33_01.jpg|200px]][[File:SiO2ICP33_03.jpg|200px]][[File:SiO2ICP33_05.jpg|200px]]
|Profile not analyzed
|-
|}
<br clear="all" />
====Results when etching a whole wafer on an Al carrier ====
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:DarkGray; color:White"
!Material to be etched
!Recipe: SiO2_ICP
|-
|Etch rate in SiO2
|22.1 nm/min
|-
|Etch rate in resist (MIR)
|16.6 nm/min
|-
|Selectivity (SiO2:resist)
|1.3
|-
|Profile Images
|[[File:SiO2ICP29_01.jpg|200px]][[File:SiO2ICP29_03.jpg|200px]][[File:SiO2ICP29_05.jpg|200px]]
|-
|}
<br clear="all" />


{| border="2" cellspacing="2" cellpadding="3"
{| border="2" cellspacing="2" cellpadding="3"

Revision as of 14:22, 15 May 2023

This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.


Parameter Recipe name: 1SiO2_02 Recipe name: 1SiO2_03 Testing other settings to increase etch rate in nitride
Coil Power [W] 150 100 150
Platen Power [W] 25 25 25
Platen temperature [oC] 20 20 20
C4F8 flow [sccm] 36 10 20
H2 flow [sccm] 13 10 0
He flow [sccm] 0 100 100
Pressure [mTorr] 2.5 2.5 2.5

Results when etching a piece of wafer on a Si carrier

Material to be etched Recipe: 1SiO2_02 *This recipe is no longer stable. Recipe: 1SiO2_03 Testing other settings to increase etch rate in nitride
Etch rate in SiO2 22.1 nm/min 26.8 nm/min ?
Etch rate in PECVD nitride . 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729) ?
Etch rate in LPCVD nitride . only around 6 nm/min (20190820) 23.7 nm/min in the middle, 17 nm/min close to the edge
Etch rate in resist (MIR) 12.5 nm/min 13.9 nm/min Not tested properly (still more than 1 µm left (1.5µm MIR) after 12 min
Selectivity (SiO2:resist) 1.8 1.9 ?
Etch rate in silicon
  • 4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117
  • 2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
Profile Images SiO2ICP26 03.jpg SiO2ICP26 05.jpg SiO2ICP26 07.jpg SiO2ICP33 01.jpgSiO2ICP33 03.jpgSiO2ICP33 05.jpg Profile not analyzed


Results when etching a whole wafer on an Al carrier

Material to be etched Recipe: SiO2_ICP
Etch rate in SiO2 22.1 nm/min
Etch rate in resist (MIR) 16.6 nm/min
Selectivity (SiO2:resist) 1.3
Profile Images SiO2ICP29 01.jpgSiO2ICP29 03.jpgSiO2ICP29 05.jpg



Material to be etched Recipe: SIO2_ICP Testing othe etch rate in nitride
Etch rate in SiO2 22.1 nm/min ?
Etch rate in PECVD nitride . 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729)
Etch rate in LPCVD nitride . 23.7 nm/min in the middle, 17 nm/min close to the edge
Etch rate in resist (MIR) 12.5 nm/min 13.9 nm/min
Selectivity (SiO2:resist) 1.8 1.9
Etch rate in silicon
  • 4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117
  • 2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
Profile Images


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