Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions

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*4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117
*4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117
*2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
*2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
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Revision as of 14:20, 15 May 2023

This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.

Material to be etched Recipe: SIO2_ICP Testing othe etch rate in nitride
Etch rate in SiO2 22.1 nm/min ?
Etch rate in PECVD nitride . 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729)
Etch rate in LPCVD nitride . 23.7 nm/min in the middle, 17 nm/min close to the edge
Etch rate in resist (MIR) 12.5 nm/min 13.9 nm/min
Selectivity (SiO2:resist) 1.8 1.9
Etch rate in silicon
  • 4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117
  • 2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
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