Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions

Revision as of 14:19, 15 May 2023

This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.

Material to be etched	Recipe: 1SiO2_02 *This recipe is no longer stable.	Testing other settings to increase etch rate in nitride
Etch rate in SiO2	22.1 nm/min	?
Etch rate in PECVD nitride	.	20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729)
Etch rate in LPCVD nitride	.	23.7 nm/min in the middle, 17 nm/min close to the edge
Etch rate in resist (MIR)	12.5 nm/min	13.9 nm/min
Selectivity (SiO2:resist)	1.8	1.9
Etch rate in silicon		4 nm/min in the middle of the wafer (80% load) bghe@Nanolab 20190117 2-3 nm/min at the edge of the wafer (80% load) bghe@Nanolab 20190117
Profile Images			Profile not analyzed

@@ Line 5: / Line 5: @@
 !Material to be etched
 !Recipe: 1SiO2_02 <span style="background:#FFD700">'''*This recipe is no longer stable.'''</span>
-!Recipe: 1SiO2_03
 !Testing other settings to increase etch rate in nitride
 |-
 |Etch rate in SiO2
 |22.1 nm/min
-|26.8 nm/min
 |?
 |-
@@ Line 16: / Line 14: @@
 |.
 |20.8nm/min (''kabi@nanolab 20190301'') - ~0nm/min (''ecsj@nanolab 20210729'')
-|?
 |-
 |Etch rate in LPCVD nitride
 |.
-|only around 6 nm/min (20190820)
 |23.7 nm/min in the middle, 17 nm/min close to the edge
 |-
@@ Line 26: / Line 22: @@
 |12.5 nm/min
 |13.9 nm/min
-|Not tested properly (still more than 1 µm left (1.5µm MIR) after 12 min
 |-
 |Selectivity (SiO2:resist)
 |1.8
 |1.9
-|?
 |-