Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions
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(Created page with " {| border="2" cellspacing="2" cellpadding="3" |-style="background:DarkGray; color:White" !Material to be etched !Recipe: 1SiO2_02 <span style="background:#FFD700">'''*This recipe is no longer stable.'''</span> !Recipe: 1SiO2_03 !Testing other settings to increase etch rate in nitride |- |Etch rate in SiO2 |22.1 nm/min |26.8 nm/min |? |- |Etch rate in PECVD nitride |. |20.8nm/min (''kabi@nanolab 20190301'') - ~0nm/min (''ecsj@nanolab 20210729'') |? |- |Etch rate in LPCVD...") |
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This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature. | |||
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Revision as of 14:18, 15 May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
| Material to be etched | Recipe: 1SiO2_02 *This recipe is no longer stable. | Recipe: 1SiO2_03 | Testing other settings to increase etch rate in nitride |
|---|---|---|---|
| Etch rate in SiO2 | 22.1 nm/min | 26.8 nm/min | ? |
| Etch rate in PECVD nitride | . | 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729) | ? |
| Etch rate in LPCVD nitride | . | only around 6 nm/min (20190820) | 23.7 nm/min in the middle, 17 nm/min close to the edge |
| Etch rate in resist (MIR) | 12.5 nm/min | 13.9 nm/min | Not tested properly (still more than 1 µm left (1.5µm MIR) after 12 min |
| Selectivity (SiO2:resist) | 1.8 | 1.9 | ? |
| Etch rate in silicon |
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