Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2/Acceptance test AlN: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page% | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/ALD2_(PEALD)/AlN_deposition_using_ALD2/Acceptance_test_AlN click here]''' | ||
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<gallery caption="" widths="500px" heights=" | <gallery caption="" widths="500px" heights="400px" perrow="2"> | ||
image:AlN with N2 Ellipsometer.png | image:AlN with N2 Ellipsometer.png | ||
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Additionally the picoflow was used for the TMA precursor. | Additionally the picoflow was used for the TMA precursor. | ||
<gallery caption="" widths="500px" heights=" | <gallery caption="" widths="500px" heights="400px" perrow="2"> | ||
image:AlN with N2 trenches2 SEM.png | image:AlN with N2 trenches2 SEM.png | ||
image:AlN with N2 trenches SEM.png | image:AlN with N2 trenches SEM.png | ||
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As the SEM images above show only a thin layer of AlN could be deposited at the bottom of the trenches. On the top the growth was significantly higher which lead to a tree like growth. | As the SEM images above show only a thin layer of AlN could be deposited at the bottom of the trenches. On the top the growth was significantly higher which lead to a tree like growth. | ||
Whereas in the images below no picoflow was used with 500 cycles and the same other parameters as in the run shown above. Without the picoflow a more homogeneous coverage could be obtained and an average growth rate of '''0,05585 nm/cycle''' was measured. | Whereas in the images below no picoflow was used with 500 cycles and the same other parameters as in the run shown above. Without the picoflow a more homogeneous coverage could be obtained and an average growth rate of '''0,05585 nm/cycle''' was measured. | ||
<gallery caption="" widths="500px" heights=" | <gallery caption="" widths="500px" heights="400px" perrow="2"> | ||
image:AlN 00.png | image:AlN 00.png | ||
image:AlN bottom 03.png | image:AlN bottom 03.png | ||
Latest revision as of 10:00, 10 May 2023
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AlN with N2 plasma
The test was done with 300 cycles at 350 °C where the growth rate was measured to be 0.0625 nm/cycle.
| TMA | N2 plasma | |
|---|---|---|
| Nitrogen flow | 150 sccm | 100 sccm |
| Pulse time | 0.1 s | 21.0 s |
| Purge time | 4.0 s | 4.0 s |
Uniformity profile across 150 mm Si wafer based on 49 measurement points measured with ellipsometer. The values for the grown oxide thickness can be seen in the table below.
| Parameter | Average | Min. | Max. | Std.Dev | %Range |
|---|---|---|---|---|---|
| Thickness (nm) | 18.77 | 18.02 | 19.73 | 0.41 | 9.0619 |
Pernille Voss Larsen, Mikkel Dysseholm Mar and Tanja Amport, DTU Nanolab, 2016-2017.
AlN with N2 plasma on trenches
The test was done with 1000 cycles at 350 °C.
| TMA | N2 plasma | |
|---|---|---|
| Nitrogen flow | 150 sccm | 100 sccm |
| Pulse time | 0.1 s | 26.0 s |
| Purge time | 4.0 s | 15.0 s |
Additionally the picoflow was used for the TMA precursor.
As the SEM images above show only a thin layer of AlN could be deposited at the bottom of the trenches. On the top the growth was significantly higher which lead to a tree like growth. Whereas in the images below no picoflow was used with 500 cycles and the same other parameters as in the run shown above. Without the picoflow a more homogeneous coverage could be obtained and an average growth rate of 0,05585 nm/cycle was measured.
Pernille Voss Larsen, Mikkel Dysseholm Mar and Tanja Amport, DTU Nanolab, 2016-2017.